Transient dynamics of NbOx threshold switches explained by Poole-Frenkel based thermal feedback mechanism

Effect of thermal insulation on the electrical characteristics of NbOx threshold switches

(2018) Ziwen Wang et al.   APPLIED PHYSICS LETTERS

Coupling dynamics of Nb/Nb2O5relaxation oscillators

(2017) Shuai Li et al.   NANOTECHNOLOGY

Chaotic dynamics in nanoscale NbO2 Mott memristors for analogue computing

(2017) Suhas Kumar et al.   NATURE

Physical origins of current and temperature controlled negative differential resistances in NbO2

(2017) Suhas Kumar et al.   Nature Communications

Multi-layered NiOy/NbOx/NiOy fast drift-free threshold switch with high Ion/Ioff ratio for selector application

(2017) Jaehyuk Park et al.   Scientific Reports

Dynamics of electroforming and electrically driven insulator-metal transition in NbOx selector

(2016) Jaehyuk Park et al.   APPLIED PHYSICS LETTERS

Off-state current reduction in NbO2-based selector device by using TiO2 tunneling barrier as an oxygen scavenger

(2016) Minkook Kang et al.   APPLIED PHYSICS LETTERS

An accurate locally active memristor model for S-type negative differential resistance in NbOx

(2016) Gary A. Gibson et al.   APPLIED PHYSICS LETTERS

Threshold switching and electrical self-oscillation in niobium oxide films

(2016) Xinjun Liu et al.   JOURNAL OF APPLIED PHYSICS

Multidimensional Simulation of Threshold Switching in NbO2Based on an Electric Field Triggered Thermal Runaway Model

(2016) Carsten Funck et al.   Advanced Electronic Materials

Threshold current reduction for the metal–insulator transition in NbO2−x-selector devices: the effect of ReRAM integration

(2015) Sanjoy Kumar Nandi et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Mott Memory and Neuromorphic Devices

(2015) You Zhou et al.   PROCEEDINGS OF THE IEEE

Reduced Threshold Current in NbO2 Selector by Engineering Device Structure

(2014) Xinjun Liu et al.   IEEE ELECTRON DEVICE LETTERS

Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices

(2012) Matthew D Pickett et al.   NANOTECHNOLOGY

A scalable neuristor built with Mott memristors

(2012) Matthew D. Pickett et al.   NATURE MATERIALS

Co-Occurrence of Threshold Switching and Memory Switching in $\hbox{Pt}/\hbox{NbO}_{x}/\hbox{Pt}$ Cells for Crosspoint Memory Applications

(2011) Xinjun Liu et al.   IEEE ELECTRON DEVICE LETTERS