Surface transfer doping of diamond: A review

2D hole gas mobility at diamond/insulator interface

(2020) G. Daligou et al.   APPLIED PHYSICS LETTERS

Engineering the spin–orbit interaction in surface conducting diamond with a solid-state gate dielectric

(2020) Kaijian Xing et al.   APPLIED PHYSICS LETTERS

Two-dimensional hole gas formed at diamond surface by Al2O3/diamond interface engineering

(2020) Kongping Wu et al.   DIAMOND AND RELATED MATERIALS

High-electron-affinity oxide V2O5 enhances surface transfer doping on hydrogen-terminated diamond

(2020) Kaijian Xing et al.   DIAMOND AND RELATED MATERIALS

An Enhancement-Mode Hydrogen-Terminated Diamond Field-Effect Transistor With Lanthanum Hexaboride Gate Material

(2020) Wei Wang et al.   IEEE ELECTRON DEVICE LETTERS

Charge-carrier mobility in hydrogen-terminated diamond field-effect transistors

(2020) Yosuke Sasama et al.   JOURNAL OF APPLIED PHYSICS

Thermal stability investigation for Ohmic contact properties of Pt, Au, and Pd electrodes on the same hydrogen-terminated diamond

(2020) Xiaolu Yuan et al.   AIP Advances

Simulation Study of Surface Transfer Doping of Hydrogenated Diamond by MoO3 and V2O5 Metal Oxides

(2020) Joseph McGhee et al.   Micromachines

Can surface-transfer doping and UV irradiation during annealing improve shallow implanted nitrogen-vacancy centers in diamond?

(2020) N. J. Glaser et al.   APPLIED PHYSICS LETTERS

Strong spin-orbit interaction induced by transition metal oxides at the surface of hydrogen-terminated diamond

(2020) Kaijian Xing et al.   CARBON

Stable, low-resistance, 1.5 to 3.5 kΩ sq−1, diamond surface conduction with a mixed metal-oxide protective film

(2020) M.W. Geis et al.   DIAMOND AND RELATED MATERIALS

Diamond Field-Effect Transistors With V2O5-Induced Transfer Doping: Scaling to 50-nm Gate Length

(2020) Kevin G. Crawford et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Refractory W Ohmic Contacts to H-Terminated Diamond

(2020) Alon Vardi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Stability of H-Terminated Diamond MOSFETs With V2O5/Al2O3 as Gate Insulator

(2019) C. Verona et al.   IEEE ELECTRON DEVICE LETTERS

Tunable carrier density and high mobility of two-dimensional hole gases on diamond: The role of oxygen adsorption and surface roughness

(2019) D. Oing et al.   DIAMOND AND RELATED MATERIALS

A DFT study of the surface charge transfer doping of diamond by chromium trioxide

(2019) Yang Xiang et al.   APPLIED SURFACE SCIENCE

MoO3 induces p-type surface conductivity by surface transfer doping in diamond

(2019) Kaijian Xing et al.   APPLIED SURFACE SCIENCE

G-factor and well width variations for the two-dimensional hole gas in surface conducting diamond

(2018) Golrokh Akhgar et al.   APPLIED PHYSICS LETTERS

Oxygen termination of homoepitaxial diamond surface by ozone and chemical methods: An experimental and theoretical perspective

(2018) Javier Navas et al.   APPLIED SURFACE SCIENCE

Fabrication of dual-termination Schottky barrier diode by using oxygen-/fluorine-terminated diamond

(2018) Dan Zhao et al.   APPLIED SURFACE SCIENCE

Chemical and semiconducting properties of NO 2 -activated H-terminated diamond

(2018) M.W. Geis et al.   DIAMOND AND RELATED MATERIALS

The role of hydrogen plasma power on surface roughness and carrier transport in transfer-doped H-diamond

(2018) Kevin G. Crawford et al.   DIAMOND AND RELATED MATERIALS

Normally-off hydrogen-terminated diamond field-effect transistor with Al 2 O 3 dielectric layer formed by thermal oxidation of Al

(2018) Yan-Feng Wang et al.   DIAMOND AND RELATED MATERIALS

A Diamond:H/WO3 Metal–Oxide–Semiconductor Field-Effect Transistor

(2018) Zongyou Yin et al.   IEEE ELECTRON DEVICE LETTERS

Performance enhancement of Al2O3/H-diamond MOSFETs utilizing vacuum annealing and V2O5 as a surface electron acceptor

(2018) David A. Macdonald et al.   IEEE ELECTRON DEVICE LETTERS

Radiation damage tests on diamond and scintillation detector components for the ITER Radial Neutron Camera

(2018) Stefania Baccaro et al.   IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Effective g factor of 2D holes in strained Ge quantum wells

(2018) I. L. Drichko et al.   JOURNAL OF APPLIED PHYSICS

Recent advances in diamond power semiconductor devices

(2018) Hitoshi Umezawa   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Mobility of Two-Dimensional Hole Gas in H-Terminated Diamond

(2018) Yao Li et al.   Physica Status Solidi-Rapid Research Letters

Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors

(2018) Nobutaka Oi et al.   Scientific Reports

Thermally Stable, High Performance Transfer Doping of Diamond using Transition Metal Oxides

(2018) Kevin G. Crawford et al.   Scientific Reports

A High Frequency Hydrogen-Terminated Diamond MISFET With ${f}_\text{T/{f}_{\max}$ of 70/80 GHz

(2018) Xinxin Yu et al.   IEEE ELECTRON DEVICE LETTERS

Progress Toward Diamond Power Field-Effect Transistors

(2018) Michael W. Geis et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

High-mobility diamond field effect transistor with a monocrystalline h-BN gate dielectric

(2018) Yosuke Sasama et al.   APL Materials

3.8 W/mm RF Power Density for ALD Al2O3-Based Two-Dimensional Hole Gas Diamond MOSFET Operating at Saturation Velocity

(2018) Shoichiro Imanishi et al.   IEEE ELECTRON DEVICE LETTERS

Normally-Off C–H Diamond MOSFETs With Partial C–O Channel Achieving 2-kV Breakdown Voltage

(2017) Yuya Kitabayashi et al.   IEEE ELECTRON DEVICE LETTERS

Diamond Field Effect Transistors With MoO3Gate Dielectric

(2017) Zeyang Ren et al.   IEEE ELECTRON DEVICE LETTERS

Al2O3 dielectric layers on H-terminated diamond: Controlling surface conductivity

(2017) Yu Yang et al.   JOURNAL OF APPLIED PHYSICS

Transport and breakdown analysis for improved figure-of-merit for AlGaN power devices

(2017) Michael E. Coltrin et al.   JOURNAL OF APPLIED PHYSICS

Polycrystalline diamond RF MOSFET with MoO3 gate dielectric

(2017) Zeyang Ren et al.   AIP Advances

Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

(2017) J. Y. Tsao et al.   Advanced Electronic Materials

Ohmic contact between iridium film and hydrogen-terminated single crystal diamond

(2017) Yan-Feng Wang et al.   Scientific Reports

Enhanced surface transfer doping of diamond by V2O5 with improved thermal stability

(2016) Kevin G. Crawford et al.   APPLIED PHYSICS LETTERS

Patterned hydrophobic and hydrophilic surfaces of ultra-smooth nanocrystalline diamond layers

(2016) M. Mertens et al.   APPLIED SURFACE SCIENCE

Device Physics Modeling of Surfaces and Interfaces from an Induced Gap State Perspective

(2016) John F. Wager et al.   CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES

Identification of Dislocations in Synthetic Chemically Vapor Deposited Diamond Single Crystals

(2016) Alexandre Tallaire et al.   CRYSTAL GROWTH & DESIGN

X-ray photoelectron spectroscopy study of Schottky junctions based on oxygen-/fluorine-terminated (100) diamond

(2016) Fengnan Li et al.   DIAMOND AND RELATED MATERIALS

V2O5MISFETs on H-Terminated Diamond

(2016) Claudio Verona et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Diamond field-effect transistors for RF power electronics: Novel NO2hole doping and low-temperature deposited Al2O3passivation

(2016) Makoto Kasu   JAPANESE JOURNAL OF APPLIED PHYSICS

Comparative investigation of surface transfer doping of hydrogen terminated diamond by high electron affinity insulators

(2016) C. Verona et al.   JOURNAL OF APPLIED PHYSICS

Fluorine-Terminated Diamond Surfaces as Dense Dipole Lattices: The Electrostatic Origin of Polar Hydrophobicity

(2016) Leonhard Mayrhofer et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Strong and Tunable Spin–Orbit Coupling in a Two-Dimensional Hole Gas in Ionic-Liquid Gated Diamond Devices

(2016) Golrokh Akhgar et al.   NANO LETTERS

Plasma surface fluorination of ultrananocrystalline diamond films

(2016) Wilhelm Kulisch et al.   SURFACE & COATINGS TECHNOLOGY

Light Metals on Oxygen-Terminated Diamond (100): Structure and Electronic Properties

(2015) Kane M. O’Donnell et al.   CHEMISTRY OF MATERIALS

High-temperature and high-voltage characteristics of Cu/diamond Schottky diodes

(2015) K. Ueda et al.   DIAMOND AND RELATED MATERIALS

Palladium Ohmic contact on hydrogen-terminated single crystal diamond film

(2015) W. Wang et al.   DIAMOND AND RELATED MATERIALS

Gate-Source Distance Scaling Effects in H-Terminated Diamond MESFETs

(2015) Claudio Verona et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Electron affinity of cubic boron nitride terminated with vanadium oxide

(2015) Yu Yang et al.   JOURNAL OF APPLIED PHYSICS

Potential barrier heights at metal on oxygen-terminated diamond interfaces

(2015) P. Muret et al.   JOURNAL OF APPLIED PHYSICS

Diamond Based Field-Effect Transistors of Zr Gate withSiNxDielectric Layers

(2015) W. Wang et al.   Journal of Nanomaterials

Focus on the Rashba effect

(2015) G Bihlmayer et al.   NEW JOURNAL OF PHYSICS

Observation of Rashba zero-field spin splitting in a strained germanium 2D hole gas

(2014) C. Morrison et al.   APPLIED PHYSICS LETTERS

A Diamond:H/MoO3 MOSFET

(2014) Alon Vardi et al.   IEEE ELECTRON DEVICE LETTERS

Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures

(2014) G. Chicot et al.   JOURNAL OF APPLIED PHYSICS

Effect of Surface Termination on Diamond (100) Surface Electrochemistry

(2014) Mir M. Hassan et al.   Journal of Physical Chemistry C

Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide

(2014) Jialing Yang et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Spin–Orbit Interaction in a Two-Dimensional Hole Gas at the Surface of Hydrogenated Diamond

(2014) Mark T. Edmonds et al.   NANO LETTERS

Arsenic-bound excitons in diamond

(2014) J. Barjon et al.   PHYSICAL REVIEW B

Cubic Rashba Spin-Orbit Interaction of a Two-Dimensional Hole Gas in a Strained-Ge/SiGeQuantum Well

(2014) Rai Moriya et al.   PHYSICAL REVIEW LETTERS

Investigation of Surface Magnetic Noise by Shallow Spins in Diamond

(2014) T. Rosskopf et al.   PHYSICAL REVIEW LETTERS

Superior Surface Transfer Doping of Diamond with MoO3

(2014) Moshe Tordjman et al.   Advanced Materials Interfaces

Diamond Surfaces with Air-Stable Negative Electron Affinity and Giant Electron Yield Enhancement

(2013) Kane M. O'Donnell et al.   ADVANCED FUNCTIONAL MATERIALS

Nitrogen-Vacancy Centers in Diamond: Nanoscale Sensors for Physics and Biology

(2013) Romana Schirhagl et al.   Annual Review of Physical Chemistry

Work function and electron affinity of the fluorine-terminated (100) diamond surface

(2013) K. J. Rietwyk et al.   APPLIED PHYSICS LETTERS

Increased negatively charged nitrogen-vacancy centers in fluorinated diamond

(2013) Shanying Cui et al.   APPLIED PHYSICS LETTERS

Surface transfer doping of diamond by MoO3: A combined spectroscopic and Hall measurement study

(2013) Stephen A. O. Russell et al.   APPLIED PHYSICS LETTERS

Electrical properties of the high quality boron-doped synthetic single-crystal diamonds grown by the temperature gradient method

(2013) V.S. Bormashov et al.   DIAMOND AND RELATED MATERIALS

Transport behavior of holes in boron delta-doped diamond structures

(2013) Richard S. Balmer et al.   JOURNAL OF APPLIED PHYSICS

Mechanism of hole doping into hydrogen terminated diamond by the adsorption of inorganic molecule

(2013) Yoshiteru Takagi et al.   SURFACE SCIENCE

Thermal Stabilization of Hole Channel on H-Terminated Diamond Surface by Using Atomic-Layer-Deposited Al$_{2}$O$_{3}$ Overlayer and its Electric Properties

(2012) Makoto Kasu et al.   Applied Physics Express

Maximum hole concentration for Hydrogen-terminated diamond surfaces with various surface orientations obtained by exposure to highly concentrated NO2

(2012) Hisashi Sato et al.   DIAMOND AND RELATED MATERIALS

Hydrogen-Terminated Diamond Field-Effect Transistors With Cutoff Frequency of 53 GHz

(2012) Stephen A. O. Russell et al.   IEEE ELECTRON DEVICE LETTERS

Diamond Field-Effect Transistors with 1.3 A/mm Drain Current Density by Al$_{2}$O$_{3}$ Passivation Layer

(2012) Kazuyuki Hirama et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

High-Current Metal Oxide Semiconductor Field-Effect Transistors on H-Terminated Diamond Surfaces and Their High-Frequency Operation

(2012) Hiroshi Kawarada   JAPANESE JOURNAL OF APPLIED PHYSICS

Charge state manipulation of qubits in diamond

(2012) Bernhard Grotz et al.   Nature Communications

Electronic properties of H-terminated diamond during NO2 and O3 adsorption and desorption

(2011) Hisashi Sato et al.   DIAMOND AND RELATED MATERIALS

Scaling of Hydrogen-Terminated Diamond FETs to Sub-100-nm Gate Dimensions

(2011) D A J Moran et al.   IEEE ELECTRON DEVICE LETTERS

Fabrication of Metal–Oxide–Diamond Field-Effect Transistors with Submicron-Sized Gate Length on Boron-Doped (111) H-Terminated Surfaces Using Electron Beam Evaporated SiO2 and Al2O3

(2011) Takeyasu Saito et al.   JOURNAL OF ELECTRONIC MATERIALS

Electric-field sensing using single diamond spins

(2011) F. Dolde et al.   Nature Physics

Chemical control of the charge state of nitrogen-vacancy centers in diamond

(2011) M. V. Hauf et al.   PHYSICAL REVIEW B

Sorption properties of NO2 gas and its strong influence on hole concentration of H-terminated diamond surfaces

(2010) Michal Kubovic et al.   APPLIED PHYSICS LETTERS

Energy level evolution of molybdenum trioxide interlayer between indium tin oxide and organic semiconductor

(2010) Irfan et al.   APPLIED PHYSICS LETTERS

Ultrashallow TiC Source/Drain Contacts in Diamond MOSFETs Formed by Hydrogenation-Last Approach

(2010) Yoshikatsu Jingu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Enhancement and Stabilization of Hole Concentration of Hydrogen-Terminated Diamond Surface Using Ozone Adsorbates

(2010) Michal Kubovic et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Resonant field emission from two-dimensional density of state on hydrogen-terminated intrinsic diamond

(2010) Takatoshi Yamada et al.   JOURNAL OF APPLIED PHYSICS

HREELS Investigation of the Surfaces of Nanocrystalline Diamond Films Oxidized by Different Processes

(2010) Slimane Ghodbane et al.   LANGMUIR

High breakdown voltage Schottky diodes synthesized on p-type CVD diamond layer

(2010) Pierre-Nicolas Volpe et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Self-consistent solution of the Schrödinger-Poisson equations for hydrogen-terminated diamond

(2010) M. T. Edmonds et al.   PHYSICAL REVIEW B

Ab initioinvestigation of lithium on the diamond C(100) surface

(2010) K. M. O’Donnell et al.   PHYSICAL REVIEW B

Hall hole mobility in boron-doped homoepitaxial diamond

(2010) J. Pernot et al.   PHYSICAL REVIEW B

Schottky barrier heights, carrier density, and negative electron affinity of hydrogen-terminated diamond

(2010) K. Tsugawa et al.   PHYSICAL REVIEW B

High hole mobility in boron doped diamond for power device applications

(2009) Pierre-Nicolas Volpe et al.   APPLIED PHYSICS LETTERS

Electronic properties of hydrogen- and oxygen-terminated diamond surfaces exposed to the air

(2009) Liu Feng-Bin et al.   Chinese Physics B

Morphological evolution of polished single crystal (100) diamond surface exposed to microwave hydrogen plasma

(2009) A. Gaisinskaya et al.   DIAMOND AND RELATED MATERIALS

Surface stability and electronic structure of hydrogen- and fluorine-terminated diamond surfaces: A first-principles investigation

(2009) Fatih G. Sen et al.   JOURNAL OF MATERIALS RESEARCH

Surface transfer doping of semiconductors

(2009) Wei Chen et al.   PROGRESS IN SURFACE SCIENCE

Spontaneous polarization model for surface orientation dependence of diamond hole accumulation layer and its transistor performance

(2008) K. Hirama et al.   APPLIED PHYSICS LETTERS

Annealing effects in H- and O-terminated P-doped diamond (111) surfaces

(2008) S. Kumaragurubaran et al.   DIAMOND AND RELATED MATERIALS

Charge transport in high mobility single crystal diamond

(2008) Miloš Nesladek et al.   DIAMOND AND RELATED MATERIALS

Surface modification of nanocrystalline diamond/amorphous carbon composite films

(2008) C. Popov et al.   DIAMOND AND RELATED MATERIALS

The electronic surface barrier of boron-doped diamond by anodic oxidation

(2008) A. Denisenko et al.   JOURNAL OF APPLIED PHYSICS

Diamond as an electronic material

(2008) Chris J.H. Wort et al.   Materials Today

Nanoscale magnetic sensing with an individual electronic spin in diamond

(2008) J. R. Maze et al.   NATURE

Ab initiosupercell calculations on nitrogen-vacancy center in diamond: Electronic structure and hyperfine tensors

(2008) Adam Gali et al.   PHYSICAL REVIEW B

Spin orientation of holes in quantum wells

(2008) R Winkler et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Characterization and electrochemical properties of CF4 plasma-treated boron-doped diamond surfaces

(2007) Takeshi Kondo et al.   DIAMOND AND RELATED MATERIALS

Unlocking diamond's potential as an electronic material

(2007) R.S Balmer et al.   PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES