Article
Materials Science, Multidisciplinary
Michael Kammermeier, Takahito Saito, Daisuke Iizasa, Ulrich Zulicke, Makoto Kohda
Summary: This study examines quantum interference corrections to the magnetoconductivity in two-dimensional electron gases with Rashba and Dresselhaus spin-orbit coupling, comparing the Landau-quantized Cooperon approach with the quasiclassical approximation. It is found that the quasiclassical approximation yields significantly different results, which can be improved by supplementing with corrections from the Euler-MacLaurin formula, but only feasible in special spin-orbit parameter configurations. The derived closed-form expression for the magnetoconductivity correction is validated through comparisons with numerical diagonalization and Monte Carlo simulations in different 2DEG crystal directions.
Article
Chemistry, Multidisciplinary
Tao Liu, Du Xiang, Hong Kuan Ng, Zichao Han, Kedar Hippalgaonkar, Ady Suwardi, Jens Martin, Slaven Garaj, Jing Wu
Summary: This research demonstrates the ability to modulate spin dynamics through strain and investigates this phenomenon in bilayer MoS2 FETs. The experimental results show that strain fields from the substrate crests cause additional spin relaxation paths, and the spin lifetime is inversely proportional to the momentum relaxation time. Furthermore, strain enhances spin-lattice coupling. This work contributes to the development of new functional quantum devices.
Article
Nanoscience & Nanotechnology
Ming Li, Ruishu Yang, Xiangyang Wei, Hang Yin, Shuanhu Wang, Kexin Jin
Summary: Research on the electron properties of ReAlO3/STO heterointerfaces reveals that different Re elements affect their conductivity and exhibit strong spin-orbit coupling effects at different temperatures. Additionally, the presence of Rashba spin-orbit coupling effects was observed in some samples, with a weak localization-strong antilocalization transition occurring around 6 K.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Physics, Multidisciplinary
H. Bai, L. Han, X. Y. Feng, Y. J. Zhou, R. X. Su, Q. Wang, L. Y. Liao, W. X. Zhu, X. Z. Chen, F. Pan, X. L. Fan, C. Song
Summary: This article provides experimental evidence of the spin splitting torque (SST) in collinear antiferromagnet RuO2 films, which combines the advantages of conventional spin transfer torque (STT) and spin-orbit torque (SOT) and enables controllable spin polarization. The findings not only expand the research field of spin torques but also propose the potential of RuO2 as a spin source.
PHYSICAL REVIEW LETTERS
(2022)
Article
Materials Science, Multidisciplinary
Yunhan Cai, Di Yue, Jingu Qin, Xiaofeng Jin
Summary: By studying Bi delta-doped Cu films, we discovered the tunable spin diffusion length and found that the spin relaxation is mainly influenced by Bi impurities following a specific mechanism.
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
(2021)
Article
Materials Science, Multidisciplinary
Hiroshi Hayasaka
Summary: This study investigates the quantum correction effect on electrical conductivity in a two-dimensional Wolff Hamiltonian, which models the spin-orbit coupling lattice system. The nonadiabatic transition processes in impurity scattering suppress the weak antilocalization effect, with a strong dependence on the spin relaxation length in the SOC lattice system. The spin relaxation length in Bi thin film is discussed in detail.
Article
Materials Science, Multidisciplinary
Kaijian Xing, Daniel L. Creedon, Golrokh Akhgar, Steve A. Yianni, Jeffrey C. McCallum, Lothar Ley, Dong-Chen Qi, Christopher Pakes
Summary: The observation of a strong and tunable spin-orbit interaction (SOI) in surface-conducting diamond opens up a new avenue for building diamond-based spintronics. By adopting a significantly improved theoretical magnetotransport model, the reduced magnetoconductance can be accurately explained both within and outside the quantum diffusive regime. Furthermore, local hole mobilities as high as 1000-3000 cm2/V s have been observed, indicating the possibility of diamond-based electronics with ultrahigh hole mobilities at cryogenic temperatures.
Article
Physics, Applied
Janmey J. Panda, Krishna R. Sahoo, Aparna Praturi, Ashique Lal, Nirmal K. Viswanathan, Tharangattu N. Narayanan, G. Rajalakshmi
Summary: In this study, we propose and demonstrate a new magneto-optic Kerr effect method based on the spin-Hall effect of light, which has competitive sensitivity and a wide range of applications. This method is used to characterize the electrical, optical, and magnetic properties of material interfaces, and a theoretical model and simulation data are provided to support its potential.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Multidisciplinary Sciences
Shuai Hu, Ding-Fu Shao, Huanglin Yang, Chang Pan, Zhenxiao Fu, Meng Tang, Yumeng Yang, Weijia Fan, Shiming Zhou, Evgeny Y. Tsymbal, Xuepeng Qiu
Summary: Deterministic and field-free switching is demonstrated in a Ni/Co multilayer by exploiting the magnetic spin Hall effect in adjacent Mn3Sn, which is essential for low-power spintronics.
NATURE COMMUNICATIONS
(2022)
Article
Physics, Multidisciplinary
Tatyana B. Nikulicheva, Vasilii S. Zakhvalinskii, Evgeny A. Pilyuk, Oleg N. Ivanov, Alexander A. Morocho, Vitaly B. Nikulichev, Maksim N. Yapryntsev
Summary: In this work, the results of magnetoresistance examination for a Cd3As2 thin film deposited on sapphire substrate are presented. It was found that weak antilocalization effect exists in the temperature range of 2-10 K. The weak antilocalization is caused by surface states and can be well described by the Hikami-Larkin-Nagaoki model. The calculated phase coherence length L phi changes with temperature T according to the power law L phi -T-0.43, indicating the presence of 2D topological surface states.
CHINESE JOURNAL OF PHYSICS
(2023)
Review
Chemistry, Multidisciplinary
Anshu Gupta, Harsha Silotia, Anamika Kumari, Manish Dumen, Saveena Goyal, Ruchi Tomar, Neha Wadehra, Pushan Ayyub, Suvankar Chakraverty
Summary: This article discusses the research progress and future application prospects of KTaO3, an oxide material. This material has excellent physical properties and potential applications, and has attracted widespread attention.
ADVANCED MATERIALS
(2022)
Article
Nanoscience & Nanotechnology
N. P. Stepina, V. A. Golyashov, A. Nenashev, O. E. Tereshchenko, K. A. Kokh, V. V. Kirienko, E. S. Koptev, E. S. Goldyreva, M. G. Rybin, E. D. Obraztsova, I. Antonova
Summary: The research found that the main contribution to the conductance of Bi2Se3 thin films grown on graphene comes from bulk states, while magnetoresistance is influenced by both surface and bulk states. A transition from weak antilocalization to weak localization is observed as the film thickness decreases. Band bending on both interfaces explains the contribution to weak antilocalization from different surfaces at different TI film thicknesses.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
(2022)
Article
Materials Science, Multidisciplinary
Rongrong Xie, Panfeng Cao, Zheyuan Xu, Boyi Xu, Jinyue Fu, Xiaoli Zhu, Xianwei Fu, Sheng-Yi Xie, Ying Jiang, Anlian Pan
Summary: This study reports a significant out-of-plane spin polarization in the two-dimensional Dion-Jacobson (DJ) perovskite, which is the physical origin of the large Rashba spin splitting observed. The generation of this unconventional spin component indicates the significant influence of the in-plane asymmetric crystal field on the spin-orbit interactions. These results suggest that the studied system may serve as a type of spin source material to explore the attractive out-of-plane spin polarization.
Article
Optics
Haoyuan Song, Xiangguang Wang, Shaopeng Hao, Shufang Fu, Xuan-Zhang Wang
Summary: We theoretically study the spin-splitting of reflected linearly-polarized vortex beam on the hyperbolic-crystal surface. We find that the in-plane or out-plane spin-splitting distance is composed of the intrinsic orbit angular momentum (IOAM) contribution and another part not related to the optical vortex. The in-plane and out-plane spin-splitting have different responses to the IOAM. The results have potential applications in infrared radiation manipulation and infrared optical detection.
OPTICS COMMUNICATIONS
(2023)
Article
Crystallography
Xiaoyong Lv, Wei Wang, Yanfeng Wang, Genqiang Chen, Shi He, Minghui Zhang, Hongxing Wang
Summary: In this paper, two dielectric layers of Al2O3 and Gd2O3 were prepared using atomic layer deposition (ALD) and magnetron sputtering deposition (SD) methods. Based on this, a metal-oxide-semiconductor field-effect transistor (MOSFET) was successfully prepared on a hydrogen-terminated single-crystal diamond (H-diamond), and its properties were studied. The results showed that the device exhibited typical p-type channel MOSFET characteristics, with a maximum current of 15.3 mA/mm and a dielectric constant of 24.8 for Gd2O3. The effective mobility of the MOSFET with Gd2O3/Al2O3 was found to be 182.1 cm(2)/Vs. To the best of our knowledge, the bilayer dielectric of Gd2O3/Al2O3 was first used in a hydrogen-terminated diamond MOSFET and showed potential for application.
Article
Physics, Condensed Matter
Natalia Alyabyeva, Jacques Ding, Mylene Sauty, Judith Woerle, Yann Jousseaume, Gabriel Ferro, Jeffrey C. McCallum, Jacques Peretti, Brett C. Johnson, Alistair C. H. Rowe
Summary: Scanning tunneling luminescence microscopy (STLM) and scanning tunneling spectroscopy (STS) were used to study step-bunched, oxidized 4H-SiC surfaces. It was found that the risers on the surface contain a higher density of surface charge traps and exhibit intense sub-gap light emission.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
(2023)
Article
Chemistry, Multidisciplinary
Brett C. Johnson, Michael Stuiber, Daniel L. Creedon, Manjith Bose, Amanuel Berhane, Laurens Henry Willems van Beveren, Sergey Rubanov, Jared H. Cole, Vincent Mourik, Alexander R. Hamilton, Timothy L. Duty, Jeffrey Colin McCallum
Summary: The development of devices with both superconducting and semiconducting properties is crucial for emerging quantum technologies. This study investigates superconducting nanowires made on a silicon-on-insulator (SOI) platform. The interdiffusion of aluminum and silicon along the entire length of the nanowire is observed, even at temperatures much lower than the Al-Si eutectic temperature. The phase-transformed material matches the predefined device patterns. The superconducting properties of a transformed mesoscopic ring on the SOI platform are also examined, and quantized low-temperature magnetoresistance oscillations in units of the fluxoid, h/2e, are observed.
Article
Physics, Applied
Ian R. Berkman, Alexey Lyasota, Gabriele G. de Boo, John G. Bartholomew, Brett C. Johnson, Jeffrey C. McCallum, Bin-Bin Xu, Shouyi Xie, Rose L. Ahlefeldt, Matthew J. Sellars, Chunming Yin, Sven Rogge
Summary: We propose a flexible method for studying the optical properties of an Er3+ ensemble in Si through resonant excitation and in situ single-photon detection. This technique allows efficient detection of optically active centers in transparent crystals without nanofabrication. We observe 70 Er3+ resonances in Si, with 62 of them not previously observed, indicating the potential of Er3+ in Si as a quantum information candidate.
PHYSICAL REVIEW APPLIED
(2023)
Article
Physics, Applied
C. T. -K. Lew, V. K. Sewani, N. Iwamoto, T. Ohshima, J. C. Mccallum, B. C. Johnson
Summary: Spin defects in solid-state sensors are investigated for their magnetic sensitivity, with potential applications in various industries. The study utilizes a silicon carbide pn-junction diode to detect a spin defect ensemble and enhance the baseline sensitivity through the hyperfine-induced spin-mixing effect observed at zero magnetic field. Additional electron-hole pairs are generated through above bandgap optical excitation, and a balanced detection scheme is implemented to reject common-mode noise, achieving an ultimate sensitivity of 30 nT/root Hz. Both techniques greatly enhance the magnetic sensitivity of the device by a total factor of approximately 24, paving the way for sub-nanotesla magnetic field sensitivities with electrical detection.
APPLIED PHYSICS LETTERS
(2023)
Article
Chemistry, Multidisciplinary
Ik Kyeong Jin, Krittika Kumar, Matthew J. Rendell, Jonathan Yue Huang, Chris C. Escott, Fay E. Hudson, Wee Han Lim, Andrew S. Dzurak, Alexander R. Hamilton, Scott D. Liles
Summary: Holes in silicon quantum dots are explored for their potential as high-speed, customizable, and scalable qubits in semiconductor quantum circuits. Challenges include difficulties in charge sensing and controlling coupling between adjacent dots. A solution is presented with the fabrication of an ambipolar complementary metal-oxide-semiconductor (CMOS) device using multilayer palladium gates. The device includes an electron charge sensor and a hole double quantum dot, enabling control of spin state and smooth interdot coupling control. The results demonstrate improvements in hole spin-qubits' quality and controllability.
Letter
Chemistry, Multidisciplinary
Daisy Q. Wang, Zeb Krix, Oleg P. Sushkov, Ian Farrer, David A. . Ritchie, Alexander R. . Hamilton, Oleh Klochan
Summary: By imposing an external periodic electrostatic potential, the electronic properties of the confined electrons in a quantum well can be different from those in the host semiconductor. In this study, we fabricated and investigated a tunable triangular artificial lattice on a GaAs/AlGaAs heterostructure, where the band structure and Fermi surface can be transformed by altering a gate bias. Magnetotransport measurements revealed multiple quantum oscillations and commensurability oscillations due to electron scattering from the artificial lattice. Increasing the modulation strength revealed new commensurability oscillations caused by electron scattering from the artificial Fermi surface and triangular lattice. These results demonstrate the ability to form artificial two-dimensional crystals with designer electronic properties using low disorder gate-tunable lateral superlattices.
Article
Multidisciplinary Sciences
Wyatt Vine, Mykhailo Savytskyi, Arjen Vaartjes, Anders Kringhoj, Daniel Parker, James Slack-Smith, Thomas Schenkel, Klaus Molmer, Jeffrey C. McCallum, Brett C. Johnson, Andrea Morello, Jarryd J. Pla
Summary: The sensitivity of pulsed electron spin resonance (ESR) measurements has been greatly enhanced by using superconducting microresonators and quantum-limited Josephson parametric amplifiers, achieving an improvement of more than four orders of magnitude. Incompatibility between Josephson junction-based devices and magnetic fields has resulted in the design of separate microwave resonators and amplifiers, leading to complex spectrometers and technical barriers. However, by coupling an ensemble of spins directly to a weakly nonlinear and magnetic field-resilient superconducting microwave resonator, this issue is circumvented. Pulsed ESR measurements with amplification within the device are successfully performed, demonstrating a high sensitivity and potential for application under conventional ESR operating conditions.
Article
Chemistry, Multidisciplinary
Mitchell A. Conway, Stuart K. Earl, Jack B. Muir, Thi-Hai-Yen Vu, Jonathan O. Tollerud, Kenji Watanabe, Takashi Taniguchi, Michael S. Fuhrer, Mark T. Edmonds, Jeffrey A. Davis
Summary: By using multidimensional coherent spectroscopy, we excited, controlled, and probed a coherent superposition of excitons in the K and K' valleys in monolayer WS(2). We observed phase rotations greater than π and showed that this could be described by a combination of the AC-Stark shift and the Bloch-Siegert shift. However, the process was not perfectly adiabatic and additional decoherence caused by power broadening was observed. These nonadiabatic effects may pose problems for certain applications, but the measurements also suggest ways to minimize or eliminate them.
Article
Chemistry, Multidisciplinary
Pin Lyu, Joachim Sodequist, Xiaoyu Sheng, Zhizhan Qiu, Anton Tadich, Qile Li, Mark T. Edmonds, Meng Zhao, Jesuis Redondo, Martin Svec, Peng Song, Thomas Olsen, Jiong Lu
Summary: In this study, researchers demonstrated the experimental results of obtaining spin-correlated flat-band states and bandgap in a monolayer of magnetic chromium tribromide (CrBr3) grown on graphene by electric field modulation. Scanning tunneling spectroscopy (STS) studies showed that the interflat-band spacing and bandgap of CrBr3 can be continuously tuned by injecting carriers into the CrBr3/graphene system. This is due to the self-screening effect of CrBr3 induced by the injected carriers, which dominates over the weakened remote screening of the graphene substrate caused by the decreased carrier density. Precise tuning of spin-correlated flat-band states and bandgap in 2D magnets through electrostatic modulation of Coulomb interactions not only provides effective strategies for optimizing spin transport channels but also has the potential to influence exchange energy and spin-wave gap, thereby raising the critical temperature for magnetic order.
Article
Physics, Applied
C. t. -k. Lew, V. K. Sewani, T. Ohshima, J. C. McCallum, B. C. Johnson
Summary: Silicon carbide (SiC) power devices are crucial in high voltage electronics, but defects at interfaces and in the bulk affect their reliability and performance. This study presents a charge pumping method to characterize SiC/SiO 2 interface defects in commercial SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs). The method is also used to investigate spin states at the SiC/SiO 2 interface through charge pumping electrically detected magnetic resonance (CP-EDMR).
JOURNAL OF APPLIED PHYSICS
(2023)
Article
Engineering, Electrical & Electronic
B. Voisin, J. Salfi, D. D. St Medar, B. C. Johnson, J. C. McCallum, M. Y. Simmons, S. Rogge
Summary: A scanning tunnelling microscope can be used to perform spatially resolved wavefunction spectroscopy and local gate control of a quantum dot device consisting of phosphorus atoms in silicon. This solid-state quantum microscope is capable of controlling and locally probing the wavefunctions of atomic quantum dots in silicon. The microscope is constructed with a scanning tunnelling microscope tip, source and gate electrodes defined on an insulating silicon substrate, and uses a light-assisted method to switch between conductive and insulating states for stable positioning and local gating.
NATURE ELECTRONICS
(2023)
Article
Materials Science, Multidisciplinary
M. J. Rendell, S. D. Liles, A. Srinivasan, O. Klochan, I. Farrer, D. A. Ritchie, A. R. Hamilton
Summary: In two-dimensional systems with a spin-orbit interaction, magnetic focusing is utilized to separate particles with different spins spatially. We conducted measurements on hole magnetic focusing under two different magnitudes of the Rashba spin-orbit interaction. We discovered that the attenuation of a focusing peak, conventionally linked to a change in spin polarization, is actually caused by a change in the scattering of a spin state in hole systems with a k3 spin-orbit interaction. Additionally, we found that the change in scattering length determined through magnetic focusing is consistent with the results obtained from Shubnikov-de Haas oscillations measurements.
