Single‐ended half‐select disturb‐free 11T static random access memory cell for reliable and low power applications
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Title
Single‐ended half‐select disturb‐free 11T static random access memory cell for reliable and low power applications
Authors
Keywords
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Journal
INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS
Volume -, Issue -, Pages -
Publisher
Wiley
Online
2021-02-19
DOI
10.1002/cta.2954
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