The importance of singly charged oxygen vacancies for electrical conduction in monoclinic HfO2

Exploiting the switching dynamics of HfO2-based ReRAM devices for reliable analog memristive behavior

(2019) F. Cüppers et al.   APL Materials

Multilevel HfO2-based RRAM devices for low-power neuromorphic networks

(2019) V. Milo et al.   APL Materials

SIMS study of oxygen diffusion in monoclinic HfO2

(2018) Michael P. Mueller et al.   APPLIED PHYSICS LETTERS

Ion migration in crystalline and amorphous HfOX

(2017) Marcel Schie et al.   JOURNAL OF CHEMICAL PHYSICS

Four-Bits-Per-Cell Operation in an HfO2 -Based Resistive Switching Device

(2017) Gun Hwan Kim et al.   Small

Filament-Induced Anisotropic Oxygen Vacancy Diffusion and Charge Trapping Effects in Hafnium Oxide RRAM

(2016) Dan Duncan et al.   IEEE ELECTRON DEVICE LETTERS

First-principles thermodynamics and defect kinetics guidelines for engineering a tailored RRAM device

(2016) Sergiu Clima et al.   JOURNAL OF APPLIED PHYSICS

High-K materials and metal gates for CMOS applications

(2015) John Robertson et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Engineering of the Chemical Reactivity of the Ti/HfO2 Interface for RRAM: Experiment and Theory.

(2014) Pauline Calka et al.   ACS Applied Materials & Interfaces

Materials selection for oxide-based resistive random access memories

(2014) Yuzheng Guo et al.   APPLIED PHYSICS LETTERS

A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope

(2014) Mario Lanza   Materials

Ab initioanalysis of the defect structure of ceria

(2013) T. Zacherle et al.   PHYSICAL REVIEW B

Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures

(2012) M. Lanza et al.   APPLIED PHYSICS LETTERS

A concerted migration mechanism of mixed oxide ion and electron conduction in reduced ceria studied by first-principles density functional theory

(2012) Masanobu Nakayama et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

High temperature electrical conduction in nanoscale hafnia films under varying oxygen partial pressure

(2010) Changhyun Ko et al.   APPLIED PHYSICS LETTERS

Electrochemical studies of capacitance in cerium oxide thin films and its relationship to anionic and electronic defect densities

(2009) William C. Chueh et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS