Ultrascaled Double-Gate Monolayer SnS2 MOSFETs for High-Performance and Low-Power Applications

First-Principles Prediction of a Room-Temperature Ferromagnetic Janus VSSe Monolayer with Piezoelectricity, Ferroelasticity, and Large Valley Polarization

(2019) Chunmei Zhang et al.   NANO LETTERS

Sub 10 nm Bilayer Bi 2 O 2 Se Transistors

(2019) Jie Yang et al.   Advanced Electronic Materials

How 2D semiconductors could extend Moore’s law

(2019) Ming-Yang Li et al.   NATURE

Excellent Device Performance of Sub‐5‐nm Monolayer Tellurene Transistors

(2019) Jiahuan Yan et al.   Advanced Electronic Materials

Unusual Electronic Transitions in Two-dimensional Layered SnSb2Te4 Driven by Electronic State Rehybridization

(2019) Wenhan Zhou et al.   Physical Review Applied

PbSe Quantum Dots Sensitized High-Mobility Bi2O2Se Nanosheets for High-Performance and Broadband Photodetection Beyond 2 μm

(2019) Peng Luo et al.   ACS Nano

2D V‐V Binary Materials: Status and Challenges

(2019) Shiying Guo et al.   ADVANCED MATERIALS

Graphene and two-dimensional materials for silicon technology

(2019) Deji Akinwande et al.   NATURE

Large‐Scale Growth and Field‐Effect Transistors Electrical Engineering of Atomic‐Layer SnS 2

(2019) Liping Xu et al.   Small

Two-Dimensional Pnictogen for Field-Effect Transistors

(2019) Wenhan Zhou et al.   Research

Many-Body Effect and Device Performance Limit of Monolayer InSe

(2018) Yangyang Wang et al.   ACS Applied Materials & Interfaces

Exploring Two-Dimensional Materials toward the Next-Generation Circuits: From Monomer Design to Assembly Control

(2018) Mengqi Zeng et al.   CHEMICAL REVIEWS

Recent progress in 2D group-VA semiconductors: from theory to experiment

(2018) Shengli Zhang et al.   CHEMICAL SOCIETY REVIEWS

PtSe2 Field-Effect Transistors: New Opportunities for Electronic Devices

(2018) AbdulAziz AlMutairi et al.   IEEE ELECTRON DEVICE LETTERS

Dirac Electrons at the Source: Breaking the 60-mV/Decade Switching Limit

(2018) Fei Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Spatially controlled doping of two-dimensional SnS2 through intercalation for electronics

(2018) Yongji Gong et al.   Nature Nanotechnology

Simulations of Quantum Transport in Sub-5-nm Monolayer Phosphorene Transistors

(2018) Ruge Quhe et al.   Physical Review Applied

Tunable Schottky barrier width and enormously enhanced photoresponsivity in Sb doped SnS2 monolayer

(2018) Junchi Liu et al.   Nano Research

Tunnel-Field-Effect Spin Filter from Two-Dimensional Antiferromagnetic Stanene

(2018) E. G. Marin et al.   Physical Review Applied

Effects of Electric Field on the Electronic Structures of Broken-gap Phosphorene/ SnX2 ( X  =  S , Se ) van der Waals Heterojunctions

(2018) Congxin Xia et al.   Physical Review Applied

Sub-10 nm Nanopattern Architecture for 2D Material Field-Effect Transistors

(2017) Kai Xu et al.   NANO LETTERS

High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se

(2017) Jinxiong Wu et al.   Nature Nanotechnology

A two-dimensional Fe-doped SnS2 magnetic semiconductor

(2017) Bo Li et al.   Nature Communications

Transistor Concepts Based on Lateral Heterostructures of Metallic and Semiconducting Phases of MoS2

(2017) Damiano Marian et al.   Physical Review Applied

High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

(2016) Denis A. Bandurin et al.   Nature Nanotechnology

Rise of silicene: A competitive 2D material

(2016) Jijun Zhao et al.   PROGRESS IN MATERIALS SCIENCE

Performance of arsenene and antimonene double-gate MOSFETs from first principles

(2016) Giovanni Pizzi et al.   Nature Communications

Performance Upper Limit of sub-10 nm Monolayer MoS2Transistors

(2016) Zeyuan Ni et al.   Advanced Electronic Materials

Atomically Thin Arsenene and Antimonene: Semimetal-Semiconductor and Indirect-Direct Band-Gap Transitions

(2015) Shengli Zhang et al.   ANGEWANDTE CHEMIE-INTERNATIONAL EDITION

2D Semiconductor FETs—Projections and Design for Sub-10 nm VLSI

(2015) Wei Cao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Phosphorene: Fabrication, Properties, and Applications

(2015) Liangzhi Kou et al.   Journal of Physical Chemistry Letters

Robust Two-Dimensional Topological Insulators in Methyl-Functionalized Bismuth, Antimony, and Lead Bilayer Films

(2015) Yandong Ma et al.   NANO LETTERS

Two-dimensional materials and their prospects in transistor electronics

(2015) F. Schwierz et al.   Nanoscale

Silicene field-effect transistors operating at room temperature

(2015) Li Tao et al.   Nature Nanotechnology

Phosphorene: what can we know from computations?

(2015) Yu Jing et al.   Wiley Interdisciplinary Reviews-Computational Molecular Science

Tin Disulfide—An Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics

(2014) Yuan Huang et al.   ACS Nano

Black phosphorus field-effect transistors

(2014) Likai Li et al.   Nature Nanotechnology

Lateral Graphene–hBCN Heterostructures as a Platform for Fully Two-Dimensional Transistors

(2012) Gianluca Fiori et al.   ACS Nano

Monolayer $\hbox{MoS}_{2}$ Transistors Beyond the Technology Road Map

(2012) Khairul Alam et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Carbon nanotube, graphene, nanowire, and molecule-based electron and spin transport phenomena using the nonequilibrium Green's function method at the level of first principles theory

(2007) Woo Youn Kim et al.   JOURNAL OF COMPUTATIONAL CHEMISTRY