Transistor Concepts Based on Lateral Heterostructures of Metallic and Semiconducting Phases of MoS2
Published 2017 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Transistor Concepts Based on Lateral Heterostructures of Metallic and Semiconducting Phases of
MoS2
Authors
Keywords
-
Journal
Physical Review Applied
Volume 8, Issue 5, Pages -
Publisher
American Physical Society (APS)
Online
2017-11-28
DOI
10.1103/physrevapplied.8.054047
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Gate-Tunable Atomically Thin Lateral MoS2 Schottky Junction Patterned by Electron Beam
- (2016) Y. Katagiri et al. NANO LETTERS
- MoS2 Field-Effect Transistor with Sub-10 nm Channel Length
- (2016) Amirhasan Nourbakhsh et al. NANO LETTERS
- An updated version of wannier90: A tool for obtaining maximally-localised Wannier functions
- (2014) Arash A. Mostofi et al. COMPUTER PHYSICS COMMUNICATIONS
- An Open-Source Multiscale Framework for the Simulation of Nanoscale Devices
- (2014) Samantha Bruzzone et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Phase-engineered low-resistance contacts for ultrathin MoS2 transistors
- (2014) Rajesh Kappera et al. NATURE MATERIALS
- Atomic mechanism of the semiconducting-to-metallic phase transition in single-layered MoS2
- (2014) Yung-Chang Lin et al. Nature Nanotechnology
- Atomically thin p–n junctions with van der Waals heterointerfaces
- (2014) Chul-Ho Lee et al. Nature Nanotechnology
- Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices
- (2014) Demetrio Logoteta et al. Scientific Reports
- Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2
- (2014) Rajesh Kappera et al. APL Materials
- Van der Waals heterostructures
- (2013) A. K. Geim et al. NATURE
- Lateral Graphene–hBCN Heterostructures as a Platform for Fully Two-Dimensional Transistors
- (2012) Gianluca Fiori et al. ACS Nano
- Coherent Atomic and Electronic Heterostructures of Single-Layer MoS2
- (2012) Goki Eda et al. ACS Nano
- Integrated Circuits Based on Bilayer MoS2 Transistors
- (2012) Han Wang et al. NANO LETTERS
- Graphene and boron nitride lateral heterostructures for atomically thin circuitry
- (2012) Mark P. Levendorf et al. NATURE
- Two-dimensional crystals-based heterostructures: materials with tailored properties
- (2012) K S Novoselov et al. PHYSICA SCRIPTA
- Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier
- (2012) H. Yang et al. SCIENCE
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Atomic layers of hybridized boron nitride and graphene domains
- (2010) Lijie Ci et al. NATURE MATERIALS
- QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials
- (2009) Paolo Giannozzi et al. JOURNAL OF PHYSICS-CONDENSED MATTER
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started