Article
Nanoscience & Nanotechnology
Wei Li, Jinlei Wei, Baoan Bian, Bin Liao, Guoliang Wang
Summary: This study investigates the electronic properties of heterojunctions composed of in-plane black phosphorus with graphene and borophene?12 electrodes using first principle calculations. It is found that strain and electric field modulation can alter the electron barrier and the hole barrier in these heterojunctions, suggesting a promising way to design tunable Schottky diodes.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
(2021)
Article
Materials Science, Multidisciplinary
Sicheng Jing, Jinghua Pan, Wen Chen, Wei Li, Baoan Bian, Bin Liao, Guoliang Wang
Summary: The electronic properties of heterostructures based on black phosphorus and two types of borophene were studied. The contact between materials resulted in the disappearance of Schottky barriers, indicating metallization. Edge modification also affected the Schottky contact type and barrier heights. Gate voltage was found to modulate both the barrier height and contact type. Ohmic contact could be achieved at certain gate voltages.
COMPUTATIONAL MATERIALS SCIENCE
(2022)
Article
Engineering, Electrical & Electronic
Cunzhi Sun, Cheng Xiang, Rongdun Hong, Feng Zhang, Timothy J. Booth, Peter Boggild, Manh-Ha Doan
Summary: This study demonstrates a method using fluorinated bilayer graphene as a barrier to prevent strong Fermi level pinning at metal/2D material interfaces, which enhances the tunability of Schottky barrier height and has potential applications in electronics and optoelectronics.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
Article
Chemistry, Physical
Zhaofu Zhang, Yuzheng Guo, John Robertson
Summary: Semiconducting oxides have significant applications, but the lack of p-type oxides with similar high mobility is a challenge. In this study, a promising p-type oxide SnTa2O6 is identified using high-throughput calculations, and other oxide properties are compared. Furthermore, p-type conductivity is observed in related niobium compounds.
CHEMISTRY OF MATERIALS
(2022)
Article
Nanoscience & Nanotechnology
Jae Eun Seo, Tanmoy Das, Eunpyo Park, Dongwook Seo, Joon Young Kwak, Jiwon Chang
Summary: Two-dimensional materials are considered key materials for future logic devices due to their excellent electrostatic integrity, but carrier polarity control in 2D material field-effect transistors remains a challenging issue. The carrier polarity in PdSe2 FETs can be modulated simply by changing the metal contact, allowing for the realization of complementary logic functions in PdSe2-based CMOS circuits. Ultimately, this study suggests the potential for PdSe2-based CMOS logic circuits with different metal contacts for n- and p-MOSFETs.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Engineering, Environmental
Xiaorui Chen, Wei He, Yujing Liang, Chenyi Yuan, Shuhui Zhang, Fei Liu, Yi Xiao
Summary: This study investigated the impact of chemically reactive organic matters like fulvic acid (FA) on the degradation and stability of black phosphorus nanosheets (BPNS) in natural waters. It revealed that FA significantly enhances the degradation of BPNS and explained the mechanism behind this degradation. This research is of great significance for the risk assessment of black phosphorus in natural waters.
Review
Optics
Guowei Zhang, Shenyang Huang, Fanjie Wang, Hugen Yan
Summary: Black phosphorus, an emerging 2D semiconductor with strong interlayer interactions and tunable bandgaps, provides an ideal platform for investigating layer-dependent properties and the transition from 2D to 3D. This review comprehensively summarizes the fundamental physical properties of black phosphorus, emphasizing layer-dependence, and explores band structure engineering through various methods. The outlook for future research is also discussed.
LASER & PHOTONICS REVIEWS
(2021)
Article
Chemistry, Physical
Pengfei Ou, Guoqiang Lan, Yiqing Chen, Xiao-Yan Li, Xiao Zhou, Cheng Chen, Fanchao Meng, Jun Song
Summary: The nature of the contact between monolayer blue phosphorus and transition metal electrodes was investigated using density functional theory calculations. The results showed different types of Schottky contacts for different metals, with the Fermi level pinned at the metal-blueP interfaces due to interface dipole formation and the production of gap states dominated by P p-orbitals. The addition of metal substrates also significantly altered the chemical properties of the adsorbed monolayer blueP, enhancing the binding strength of hydrogen and making it comparable to Pt catalysts. These findings provide theoretical guidance for the design of electronic devices based on blueP and the development of novel catalysts.
APPLIED SURFACE SCIENCE
(2022)
Article
Chemistry, Multidisciplinary
Jun Mei, Tianwei He, Juan Bai, Dongchen Qi, Aijun Du, Ting Liao, Godwin A. Ayoko, Yusuke Yamauchi, Litao Sun, Ziqi Sun
Summary: The introduction of nanosized iridium (Ir) modifier and optimized exposed surfaces towards electrolytes leads to an efficient Ir-modified BP electrocatalyst with favorable adsorption energies towards catalytic intermediates, showing outstanding pH-universal water splitting performance surpassing most reported BP-based and commercial noble-metal catalysts.
ADVANCED MATERIALS
(2021)
Article
Chemistry, Physical
Bo Xu, Sha Yang, Yang Li, Hui Li, Zhao-Yuan Sun, Xue-Yin Sun, Jia Zhang, Jing-Kai Qin, Ping-An Hu, Liang Zhen, Wei Liu, Cheng-Yan Xu
Summary: By inserting a two-dimensional semiconductor InSe between metal and TMDs, the large Schottky barrier height (SBH) at TMDs/metal interfaces can be effectively alleviated, leading to enhanced device performance of WSe2 and MoS2 transistors.
APPLIED SURFACE SCIENCE
(2023)
Article
Chemistry, Multidisciplinary
Jianfeng Li, Shuang Yi, Kaiqiang Wang, Yanfei Liu, Jinjin Li
Summary: This study proposes a method for precisely thinning black phosphorus layer by layer using alkene oxidation, providing a new approach for nanopatterning. Through density functional theory calculations and precise preparation of few-layer BP, heterojunctions of BP have been successfully fabricated, demonstrating the potential of this technology in high-performance nanodevice design.
Article
Materials Science, Multidisciplinary
P. S. Vergeles, Yu. O. Kulanchikov, A. Y. Polyakov, E. B. Yakimov, S. J. Pearton
Summary: To achieve low leakage in GaN-based power devices and improve reliability in optoelectronic devices, reducing the dislocation density in GaN epitaxial layers is necessary. This study investigates the effect of electron-beam irradiation on the displacement of freshly introduced dislocations in GaN and finds that they can be displaced up to distances of 10-15 μm from the beam position. The analysis suggests that the existence of a large density of pinning defects is the main factor limiting the dislocation displacement in GaN.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2022)
Article
Physics, Applied
Yibo Wang, Wenhui Xu, Genquan Han, Tiangui You, Fengwen Mu, Haodong Hu, Yan Liu, Xinchuang Zhang, Hao Huang, Tadatomo Suga, Xin Ou, Xiaohua Ma, Yue Hao
Summary: The article reports on the interface performance of the beta-Ga2O3((2) over bar 01)/TiN Schottky barrier diode (SBD) on a heterogeneous integrated Ga2O3-Al2O3-Si (GaOISi) substrate. The SBD exhibits stable characteristics and consistent on-state to off-state current ratio at different temperatures. Additionally, the effective barrier height φ(B, eff) decreases with increasing temperature, leading to a decrease in V-on.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Article
Materials Science, Multidisciplinary
Neetika Yadav, Priyanka Roy, Ayush Khare
Summary: The stability of FAPbI3 based perovskite solar cells has been a major concern, which can be improved by incorporating Cs+ and Br- ions. This study optimized different organic and inorganic charge transport layers to explain the charge collection and transportation processes at perovskite/CTL and HTL/back contact interfaces, and investigated the impact of Schottky barrier height at the HTL/back contact interface. Simulation results showed that ZnO (as ETL) and SrCu2O2 (as HTL) demonstrated the highest efficiency of 19.02% among all the investigated CTLs.
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Zexia Ma, Fang Wang, Xin Shan, Xin Lin, Yupeng Zhang, Xiaowei Guo, Wanning Liu, Yemei Han, Xuanyu Zhao, Zhitang Song, Kailiang Zhang
Summary: By optimizing the thickness of the Al2O3 switching layer in the self-rectifying memristor (SRM), this article achieves a rectification ratio of approximately 403.79 and nA-level sneak current. It solves the crosstalk issue caused by current leakage and enables a higher level of array integration.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Physics, Applied
Chuanchao Zhu, Yanrong Wang, Feng Wang, Jia Yang, Xueying Zhan, Liang Fang, Zhenxing Wang, Jun He
Summary: This study demonstrates a nonvolatile reconfigurable broadband photodetector based on a BP/alpha-In2Se3 heterostructure. The device shows excellent performance in terms of rectification ratio, responsivity, and spectral response. It has considerable potential in neuromorphic visual systems.
APPLIED PHYSICS LETTERS
(2022)
Article
Chemistry, Physical
Jiangchao Liu, Chongyang Tang, Zunjian Ke, Rui Chen, Hongbo Wang, Wenqing Li, Changzhong Jiang, Dong He, Gongming Wang, Xiangheng Xiao
Summary: This study systematically investigates the regulation of hydrogen adsorption by d-d orbital interaction of metallic tungsten dioxide and demonstrates that optimizing hydrogen adsorption via d-d orbital modulation is an effective approach to developing efficient and robust catalysts.
ADVANCED ENERGY MATERIALS
(2022)
Review
Materials Science, Multidisciplinary
Jing Wang, Changzhong Jiang, Wenqing Li, Xiangheng Xiao
Summary: This review provides an overview of the recent developments in polarization-sensitive photodetectors based on anisotropic systems. It presents the classification and anisotropic properties of low-dimensional materials, analyzes the anisotropic characteristics of different material systems from the perspective of crystallography, and discusses the working mechanism of polarization-sensitive photodetectors. Furthermore, it reviews the recent advances of polarization-sensitive photodetectors based on low-dimensional materials and addresses some breakthroughs for future development in this field.
ADVANCED OPTICAL MATERIALS
(2022)
Article
Chemistry, Physical
Hui Duan, Hengyi Wu, Huizhou Zhong, Xuening Wang, Wenjing Wan, Derun Li, Guangxu Cai, Changzhong Jiang, Feng Ren
Summary: Ion irradiation is an effective method to improve the photoelectrochemical performance of BiVO4 by introducing oxygen vacancies, leading to higher photocurrent density and improved separation efficiency of photogenerated carriers.
JOURNAL OF PHYSICAL CHEMISTRY C
(2022)
Article
Nanoscience & Nanotechnology
Tao Yan, Fengjing Liu, Yanrong Wang, Jia Yang, Chuyun Ding, Yuchen Cai, Zilong Wu, Xueying Zhan, Feng Wang, Yanhong Tian, Jun He, Zhenxing Wang
Summary: This study reports on the photovoltaic effect in 2D-layered materials and van der Waals heterostructures, showing that the short-circuit current density can be significantly increased by introducing perovskite and enhancing the ferroelectric polarization. This demonstrates the potential of high-performance optoelectronic devices.
ADVANCED ELECTRONIC MATERIALS
(2022)
Article
Engineering, Electrical & Electronic
Ruohao Hong, Qianlei Tian, Jun Lin, Liming Wang, Tong Bu, Hao Huang, Wenjing Qin, Lei Liao, Xuming Zou
Summary: In recent years, there has been extensive research on ambipolar SnO TFTs due to the increasing demand for simplifying CMOS circuits and fabricating more compact CMOS devices. However, the decline in device performance under gate-bias stress and environmental exposure necessitates the development of an effective passivation strategy. This study demonstrates the use of an Al2O3/HfO2 bilayer dielectric as a passivation layer to significantly enhance the operational stability of ambipolar SnO TFTs.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Multidisciplinary Sciences
Jiewei Chen, Ting Zhang, Jingli Wang, Lin Xu, Ziyuan Lin, Jidong Liu, Cong Wang, Ning Zhang, Shu Ping Lau, Wenjing Zhang, Manish Chhowalla, Yang Chai
Summary: This article introduces a low-loss transistor based on topological phase change. By modulating the energy difference of tellurium, the transistor switches between Weyl and conventional phases, enabling low-loss and high-efficiency transport. This study provides a new strategy for achieving ultra-low power electronics.
Article
Engineering, Electrical & Electronic
Xisai Zhang, Xinpei Duan, Wencheng Niu, Xingqiang Liu, Xuming Zou, Hao Huang, Dinusha Herath Mudiyanselage, Houqiang Fu, Bei Jiang, Guoxia Liu, Zhenyu Yang
Summary: This study reports a Schottky metal-semiconductor photodiode with a vertical structure and an ultrashort channel made of molybdenum disulfide (MoS2). The device exhibits excellent rectification and optical response characteristics due to the large Schottky barrier height. The vertical structure reduces the channel length to the atomic scale and efficiently collects excited carriers. The study also employs the thermionic emission theory to explain the impact of light intensity and voltage bias on the photodiode responsivity.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Physics, Applied
Penghui He, Chunchun Ding, Xuming Zou, Guoli Li, Wei Hu, Chao Ma, Denis Flandre, Benjamin Iniguez, Lei Liao, Linfeng Lan, Xingqiang Liu
Summary: A solution-processed bilayer active channel is designed to improve the stability and mobility of Tb-doped indium oxide (Tb:In2O3) thin-film transistors. The bilayer channel has a large conduction band offset, leading to accumulation of abundant electrons at the interface and significant improvement in mobility. Additionally, the bilayer Tb:In2O3 transistors exhibit good stability under photoinduced stress.
APPLIED PHYSICS LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Penghui He, Ruohao Hong, Guoli Li, Xuming Zou, Wei Hu, Linfeng Lan, Benjamin Iniguez, Lei Liao, Xingqiang Liu
Summary: The impact of relative humidity on the electronic performance and bias stability of aqueous-processed Tb-doped indium oxide (Tb:In2O3) thin-film transistors (TFTs) is investigated. The mobility of the TFTs is sensitive to relative humidity. Optimal mobility and low threshold voltage shift are achieved by tuning the relative humidity. Dry and high humid ambience both have negative effects on the performance and stability of the TFTs.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Yuyan Zhou, Yu Song, Ruohao Hong, Xingqiang Liu, Xuming Zou, Benjamin Iniguez, Denis Flandre, Guoli Li, Lei Liao
Summary: In this study, the electrical evolution of p-type SnOx film and transistor is investigated by altering oxygen partial pressure and sputtering power in the radio frequency magnetron sputtering process. The optimal oxygen partial pressure range is found to be 4.8%-7.2% for SnOx film deposition at sputtering powers of 70 and 30 W. X-ray photoelectron spectroscopy analysis reveals that SnOx films deposited at high power show less sensitivity to oxygen partial pressure and have a relatively large process window. The defect states inside the SnOx are also analyzed.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Physics, Applied
Chengjie Zhou, Wencheng Niu, Lei Li, Dandan Hao, Hao Huang, Houqiang Fu, Xingqiang Liu, Xuming Zou, Fukai Shan, Zhenyu Yang
Summary: In this study, a multifunctional optoelectronic memory was developed by coupling Au nanoparticles with MoS2, enhancing the light absorption capacity of MoS2 and achieving excellent device performance and storage time. Based on this research, a hardware core mimicking human retinal imaging was proposed to enable advances in neuromorphic electronics, particularly in optical information sensing and learning.
APPLIED PHYSICS LETTERS
(2023)
Article
Chemistry, Physical
Guangjian Wu, Xumeng Zhang, Guangdi Feng, Jingli Wang, Keji Zhou, Jinhua Zeng, Danian Dong, Fangduo Zhu, Chenkai Yang, Xiaoming Zhao, Danni Gong, Mengru Zhang, Bobo Tian, Chungang Duan, Qi Liu, Jianlu Wang, Junhao Chu, Ming Liu
Summary: This study demonstrates an in-memory sensing and computing architecture using ferroelectric-defined reconfigurable two-dimensional photodiode arrays. High-level cognitive computing is achieved through the multiplication of light power and photoresponsivity using the photocurrent generation process and Kirchhoff's law. The weight is stored and programmed locally by the ferroelectric domains, allowing for multiple distinguishable weight states. This architecture enables image recognition without the need for external memory and computing units, paving the way for low-energy, low-latency, and reduced hardware overhead computing.
Article
Multidisciplinary Sciences
Hang Xu, Shuyao Si, Yipeng Li, Xiangbing Liu, Wenqing Li, Changzhong Jiang, Shijun Zhao, Hui Wang, Xiangheng Xiao
Summary: The radiation response of Nb-containing FeCrAl alloys under heavy ion radiation has been studied, showing excellent performance and the critical role of Laves phase in capturing radiation defects. The stability of Laves phase in radiation environment has been analyzed.
FUNDAMENTAL RESEARCH
(2022)
Article
Materials Science, Multidisciplinary
Chongyang Tang, Dong He, Nan Zhang, Xianyin Song, Shuangfeng Jia, Zunjian Ke, Jiangchao Liu, Jianbo Wang, Changzhong Jiang, Ziyu Wang, Xiaoqing Huang, Xiangheng Xiao
Summary: Engineering the electronic structure of surface active sites at the atomic level can efficiently modulate catalyst reactivity. By anchoring atomically dispersed metal atoms on FePS3 nanosheets, a strong electronic coupling effect is achieved, facilitating electron aggregation and enhancing electron-transfer for improved oxygen and water adsorption processes, leading to enhanced oxygen evolution and hydrogen evolution reactions. The concept of electronic coupling interaction provides a new method for catalyst design and beyond, demonstrating outstanding electrochemical water-splitting activities in the study.
ENERGY & ENVIRONMENTAL MATERIALS
(2022)
