Low‐Power Complementary Inverter with Negative Capacitance 2D Semiconductor Transistors

Graphene–Transition Metal Dichalcogenide Heterojunctions for Scalable and Low-Power Complementary Integrated Circuits

(2020) Chao-Hui Yeh et al.   ACS Nano

Doping-free complementary WSe2 circuit via van der Waals metal integration

(2020) Lingan Kong et al.   Nature Communications

Degenerately Doped Transition Metal Dichalcogenides as Ohmic Homojunction Contacts to Transition Metal Dichalcogenide Semiconductors

(2019) Zhibin Gao et al.   ACS Nano

Controllable P‐ and N‐Type Conversion of MoTe 2 via Oxide Interfacial Layer for Logic Circuits

(2019) Yong Ju Park et al.   Small

End-Bonded Metal Contacts on WSe2 Field-Effect Transistors

(2019) Chun-Hao Chu et al.   ACS Nano

Tunable Negative Differential Resistance in van der Waals Heterostructures at Room Temperature by Tailoring the Interface

(2019) Sidi Fan et al.   ACS Nano

Chemically Tuned p‐ and n‐Type WSe 2 Monolayers with High Carrier Mobility for Advanced Electronics

(2019) Hyun Goo Ji et al.   ADVANCED MATERIALS

Quest for p-Type Two-Dimensional Semiconductors

(2019) Qiyuan He et al.   ACS Nano

A New Opportunity for 2D van der Waals Heterostructures: Making Steep‐Slope Transistors

(2019) Juan Lyu et al.   ADVANCED MATERIALS

Impact of Thickness on Contact Issues for Pinning Effect in Black Phosphorus Field-Effect Transistors

(2018) Bei Jiang et al.   ADVANCED FUNCTIONAL MATERIALS

Atomic structure of defects and dopants in 2D layered transition metal dichalcogenides

(2018) Shanshan Wang et al.   CHEMICAL SOCIETY REVIEWS

Contact engineering for 2D materials and devices

(2018) Daniel S. Schulman et al.   CHEMICAL SOCIETY REVIEWS

Steep-Slope WSe2 Negative Capacitance Field-Effect Transistor

(2018) Mengwei Si et al.   NANO LETTERS

Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions

(2018) Yuan Liu et al.   NATURE

Complementary Logic with Voltage Zero-Loss and Nano-Watt Power via Configurable MoS2 /WSe2 Gate

(2018) Heng Zhang et al.   ADVANCED FUNCTIONAL MATERIALS

Self-Driven Metal-Semiconductor-Metal WSe2 Photodetector with Asymmetric Contact Geometries

(2018) Changjian Zhou et al.   ADVANCED FUNCTIONAL MATERIALS

Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2 Transistors

(2017) Felicia A. McGuire et al.   NANO LETTERS

Steep-slope hysteresis-free negative capacitance MoS2 transistors

(2017) Mengwei Si et al.   Nature Nanotechnology

Air-Stable n-Doping of WSe2 by Anion Vacancy Formation with Mild Plasma Treatment

(2016) Mahmut Tosun et al.   ACS Nano

Carrier Type Control of WSe2Field-Effect Transistors by Thickness Modulation and MoO3Layer Doping

(2016) Changjian Zhou et al.   ADVANCED FUNCTIONAL MATERIALS

High Mobility MoS2Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer

(2016) Jingli Wang et al.   ADVANCED MATERIALS

2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures

(2016) Tania Roy et al.   APPLIED PHYSICS LETTERS

Defects as a factor limiting carrier mobility in WSe2: A spectroscopic investigation

(2016) Zhangting Wu et al.   Nano Research

High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits

(2015) Lili Yu et al.   NANO LETTERS

Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT

(2015) Changjian Zhou et al.   Nanoscale

Electrical contacts to two-dimensional semiconductors

(2015) Adrien Allain et al.   NATURE MATERIALS

WSe2 field effect transistors with enhanced ambipolar characteristics

(2013) Saptarshi Das et al.   APPLIED PHYSICS LETTERS

Understanding the Impact of Schottky Barriers on the Performance of Narrow Bandgap Nanowire Field Effect Transistors

(2012) Yanjie Zhao et al.   NANO LETTERS

Integrated Circuits and Logic Operations Based on Single-Layer MoS2

(2011) Branimir Radisavljevic et al.   ACS Nano