Process for Growth of Group-IV Alloys Containing Tin by Remote Plasma Enhanced Chemical Vapor Deposition

Mid-infrared (3–8 μm) Ge1−ySny alloys (0.15 

(2019) Chi Xu et al.   APPLIED PHYSICS LETTERS

GeSn Lasers Covering a Wide Wavelength Range Thanks to Uniaxial Tensile Strain

(2019) Jérémie Chrétien et al.   ACS Photonics

Growth of high-Sn content (28%) GeSn alloy films by sputtering epitaxy

(2018) Jun Zheng et al.   JOURNAL OF CRYSTAL GROWTH

GeSn growth kinetics in reduced pressure chemical vapor deposition from Ge 2 H 6 and SnCl 4

(2018) J. Aubin et al.   JOURNAL OF CRYSTAL GROWTH

Infrared dielectric response, index of refraction, and absorption of germanium-tin alloys with tin contents up to 27% deposited by molecular beam epitaxy

(2018) Dominic Imbrenda et al.   APPLIED PHYSICS LETTERS

Deviations from Vegard's law in semiconductor thin films measured with X-ray diffraction and Rutherford backscattering: The Ge1-ySny and Ge1-xSix cases

(2017) Chi Xu et al.   JOURNAL OF APPLIED PHYSICS

Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K

(2017) Joe Margetis et al.   ACS Photonics

An optically pumped 2.5 μm GeSn laser on Si operating at 110 K

(2016) Sattar Al-Kabi et al.   APPLIED PHYSICS LETTERS

Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications

(2016) Yiyin Zhou et al.   JOURNAL OF APPLIED PHYSICS

Si–Ge–Sn alloys: From growth to applications

(2016) S. Wirths et al.   PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS

Material gain engineering in GeSn/Ge quantum wells integrated with an Si platform

(2016) H. S. Mączko et al.   Scientific Reports

Optically Pumped GeSn Microdisk Lasers on Si

(2016) Daniela Stange et al.   ACS Photonics

Lasing in direct-bandgap GeSn alloy grown on Si

(2015) S. Wirths et al.   Nature Photonics

Growth and applications of GeSn-related group-IV semiconductor materials

(2015) Shigeaki Zaima et al.   SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS

Silicon-based silicon-germanium-tin heterostructure photonics

(2014) R. Soref   PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES

Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect band gap bowing

(2013) Alexander A. Tonkikh et al.   APPLIED PHYSICS LETTERS

Achieving direct band gap in germanium through integration of Sn alloying and external strain

(2013) Suyog Gupta et al.   JOURNAL OF APPLIED PHYSICS

Epitaxial growth of highly compressively strained GeSn alloys up to 12.5% Sn

(2013) M. Oehme et al.   JOURNAL OF CRYSTAL GROWTH

SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications

(2013) S. Wirths et al.   THIN SOLID FILMS

Next generation of Ge1−ySny (y = 0.01-0.09) alloys grown on Si(100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission

(2012) G. Grzybowski et al.   APPLIED PHYSICS LETTERS

Compositional dependence of the absorption edge and dark currents in Ge1−x−ySixSny/Ge(100) photodetectors grown via ultra-low-temperature epitaxy of Ge4H10, Si4H10, and SnD4

(2012) R. T. Beeler et al.   APPLIED PHYSICS LETTERS

Ultra-Low-Temperature Epitaxy of Ge-based Semiconductors and Optoelectronic Structures on Si(100): Introducing Higher Order Germanes (Ge3H8, Ge4H10)

(2012) Gordon Grzybowski et al.   CHEMISTRY OF MATERIALS

The direct and indirect bandgaps of unstrained SixGe1−x−ySny and their photonic device applications

(2012) P. Moontragoon et al.   JOURNAL OF APPLIED PHYSICS

Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

(2011) B. Vincent et al.   APPLIED PHYSICS LETTERS

Growth of silicon based germanium tin alloys

(2011) E. Kasper et al.   THIN SOLID FILMS

Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon

(2010) J. Mathews et al.   APPLIED PHYSICS LETTERS