Compositional dependence of the absorption edge and dark currents in Ge1−x−ySixSny/Ge(100) photodetectors grown via ultra-low-temperature epitaxy of Ge4H10, Si4H10, and SnD4

Ultra-Low-Temperature Epitaxy of Ge-based Semiconductors and Optoelectronic Structures on Si(100): Introducing Higher Order Germanes (Ge3H8, Ge4H10)

(2012) Gordon Grzybowski et al.   CHEMISTRY OF MATERIALS

GeSiSn Photodiodes With 1 eV Optical Gaps Grown on Si(100) and Ge(100) Platforms

(2012) R. T. Beeler et al.   IEEE Journal of Photovoltaics

High-Performance Near-IR Photodiodes: A Novel Chemistry-Based Approach to Ge and Ge–Sn Devices Integrated on Silicon

(2011) Radek Roucka et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Complementary metal-oxide semiconductor-compatible detector materials with enhanced 1550 nm responsivity via Sn-doping of Ge/Si(100)

(2011) Radek Roucka et al.   JOURNAL OF APPLIED PHYSICS

Synthesis, Stability Range, and Fundamental Properties of Si−Ge−Sn Semiconductors Grown Directly on Si(100) and Ge(100) Platforms

(2010) Junqi Xie et al.   CHEMISTRY OF MATERIALS

Dark Current Mechanism in Bulk GaInNAs Lattice Matched to GaAs

(2010) Lionel J. J. Tan et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Direct integration of active Ge1−x(Si4Sn)x semiconductors on Si(100)

(2009) Junqi Xie et al.   APPLIED PHYSICS LETTERS

Tunable Optical Gap at a Fixed Lattice Constant in Group-IV Semiconductor Alloys

(2009) V. R. D’Costa et al.   PHYSICAL REVIEW LETTERS

Sn-alloying as a means of increasing the optical absorption of Ge at theC- andL-telecommunication bands

(2009) Vijay R D'Costa et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductors

(2009) V.R. D'Costa et al.   THIN SOLID FILMS

Molecular-Based Synthetic Approach to New Group IV Materials for High-Efficiency, Low-Cost Solar Cells and Si-Based Optoelectronics

(2008) Yan-Yan Fang et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY