Achieving direct band gap in germanium through integration of Sn alloying and external strain

Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach

(2013) G. Capellini et al.   JOURNAL OF APPLIED PHYSICS

Next generation of Ge1−ySny (y = 0.01-0.09) alloys grown on Si(100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission

(2012) G. Grzybowski et al.   APPLIED PHYSICS LETTERS

Material characterization of high Sn-content, compressively-strained GeSn epitaxial films after rapid thermal processing

(2012) Robert Chen et al.   JOURNAL OF CRYSTAL GROWTH

A micromachining-based technology for enhancing germanium light emission via tensile strain

(2012) Jinendra Raja Jain et al.   Nature Photonics

Low-temperature growth of Ge1−xSnx thin films with strain control by molecular beam epitaxy

(2012) Hai Lin et al.   THIN SOLID FILMS

Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

(2011) B. Vincent et al.   APPLIED PHYSICS LETTERS

Increased photoluminescence of strain-reduced, high-Sn composition Ge1−xSnx alloys grown by molecular beam epitaxy

(2011) Robert Chen et al.   APPLIED PHYSICS LETTERS

Strained germanium thin film membrane on silicon substrate for optoelectronics

(2011) Donguk Nam et al.   OPTICS EXPRESS

Band structure and optical gain of tensile-strained germanium based on a 30 band k⋅p formalism

(2010) Moustafa El Kurdi et al.   JOURNAL OF APPLIED PHYSICS

Origin of the unusually large band-gap bowing and the breakdown of the band-edge distribution rule in theSnxGe1−xalloys

(2008) Wan-Jian Yin et al.   PHYSICAL REVIEW B