4.6 Article

The direct and indirect bandgaps of unstrained SixGe1-x-ySny and their photonic device applications

Journal

JOURNAL OF APPLIED PHYSICS
Volume 112, Issue 7, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4757414

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Funding

  1. Air Force Office of Scientific Research, Gernot Pomrenke [FA9550-10-1-0417]

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Using empirical pseudopotential theory, the direct (Gamma) and indirect bandgaps (L and X) of unstrained crystalline SixGe1-x-ySny have been calculated over the entire xy composition range. The results are presented as energy-contour maps on ternary diagrams along with a ternary plot of the predicted lattice parameters. A group of 0.2 to 0.6 eV direct-gap SiGeSn materials is found for a variety of mid-infrared photonic applications. A set of slightly indirect SiGeSn alloys having a direct gap at 0.8 eV (but with a smaller L-Gamma separation than in Ge) have been identified. These materials will function like Ge in various telecom photonic devices. Hetero-layered SiGeSn structures are described for infrared light emitters, amplifiers, photodetectors, and modulators (free carrier or Franz-Keldysh). We have examined in detail the optimized design space for mid-infrared SiGeSn-based multiple-quantum-well laser diodes, amplifiers, photodetectors, and quantum-confined Stark effect modulators. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4757414]

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