Deviations from Vegard's law in semiconductor thin films measured with X-ray diffraction and Rutherford backscattering: The Ge1-ySny and Ge1-xSix cases

Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes

(2016) C. L. Senaratne et al.   JOURNAL OF APPLIED PHYSICS

Development of Light Emitting Group IV Ternary Alloys on Si Platforms for Long Wavelength Optoelectronic Applications

(2014) Liying Jiang et al.   CHEMISTRY OF MATERIALS

Ge1-ySny (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

(2014) C. L. Senaratne et al.   JOURNAL OF APPLIED PHYSICS

Combining metrology techniques for in-line control of thin SiGe:B layers

(2014) Delphine Le Cunff et al.   Journal of Micro-Nanolithography MEMS and MOEMS

Improved physics in SIMNRA 7

(2014) M. Mayer   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy

(2013) Nupur Bhargava et al.   APPLIED PHYSICS LETTERS

XRD study of the kinetics of β ↔ α transformations in tin

(2013) K. Nogita et al.   PHILOSOPHICAL MAGAZINE

New strategies for Ge-on-Si materials and devices using non-conventional hydride chemistries: the tetragermane case

(2013) Chi Xu et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Analysis for positions of Sn atoms in epitaxial Ge1−xSnx film in low temperature depositions

(2013) Eiji Kamiyama et al.   THIN SOLID FILMS

Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn

(2013) F. Gencarelli et al.   ECS Journal of Solid State Science and Technology

Structure of Sn1−xGex random alloys as obtained from the coherent potential approximation

(2011) J. J. Pulikkotil et al.   JOURNAL OF APPLIED PHYSICS

High precision determination of the InN content of Al1−xInxN thin films by Rutherford backscattering spectrometry

(2011) S. Magalhães et al.   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

Nonlinear structure-composition relationships in the Ge1−ySny/Si(100) (y

(2011) R. Beeler et al.   PHYSICAL REVIEW B

Electronic structure of SnxGe1−x alloys for small Sn compositions: Unusual structural and electronic properties

(2010) Y. Chibane et al.   JOURNAL OF APPLIED PHYSICS

Applications of X-Ray Characterization for Advanced Materials in the Electronics Industry

(2010) A. Vigliante et al.   METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE

Lattice location study of ion implanted Sn and Sn-related defects in Ge

(2010) S. Decoster et al.   PHYSICAL REVIEW B

Defect interactions in Sn1−xGex random alloys

(2009) A. Chroneos et al.   APPLIED PHYSICS LETTERS

Statistical model for the formation of the alloy

(2009) C.I. Ventura et al.   PHYSICA B-CONDENSED MATTER

Nonsubstitutional single-atom defects in theGe1−xSnxalloy

(2009) C. I. Ventura et al.   PHYSICAL REVIEW B

Nonlinear stability ofEcenters inSi1−xGex: Electronic structure calculations

(2008) A. Chroneos et al.   PHYSICAL REVIEW B

Summary of “IAEA intercomparison of IBA software”

(2007) N.P. Barradas et al.   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS