Next generation of Ge1−ySny (y = 0.01-0.09) alloys grown on Si(100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission

Ultra-Low-Temperature Epitaxy of Ge-based Semiconductors and Optoelectronic Structures on Si(100): Introducing Higher Order Germanes (Ge3H8, Ge4H10)

(2012) Gordon Grzybowski et al.   CHEMISTRY OF MATERIALS

Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

(2011) B. Vincent et al.   APPLIED PHYSICS LETTERS

Direct gap electroluminescence from Si/Ge1−ySny p-i-n heterostructure diodes

(2011) R. Roucka et al.   APPLIED PHYSICS LETTERS

High-Performance Near-IR Photodiodes: A Novel Chemistry-Based Approach to Ge and Ge–Sn Devices Integrated on Silicon

(2011) Radek Roucka et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Complementary metal-oxide semiconductor-compatible detector materials with enhanced 1550 nm responsivity via Sn-doping of Ge/Si(100)

(2011) Radek Roucka et al.   JOURNAL OF APPLIED PHYSICS

Nonlinear structure-composition relationships in the Ge1−ySny/Si(100) (y

(2011) R. Beeler et al.   PHYSICAL REVIEW B

Direct versus indirect optical recombination in Ge films grown on Si substrates

(2011) G. Grzybowski et al.   PHYSICAL REVIEW B

Low-temperature Ge and GeSn Chemical Vapor Deposition using Ge2H6

(2011) F. Gencarelli et al.   THIN SOLID FILMS

Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon

(2010) J. Mathews et al.   APPLIED PHYSICS LETTERS

Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications

(2009) Jay Mathews et al.   APPLIED PHYSICS LETTERS

High Quality Ge Virtual Substrates on Si Wafers with Standard STI Patterning

(2009) R. Loo et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Sn-alloying as a means of increasing the optical absorption of Ge at theC- andL-telecommunication bands

(2009) Vijay R D'Costa et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY