Low-resistance GaN tunnel homojunctions with 150 kA/cm2 current and repeatable negative differential resistance
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Title
Low-resistance GaN tunnel homojunctions with 150 kA/cm2 current and repeatable negative differential resistance
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 108, Issue 13, Pages 131103
Publisher
AIP Publishing
Online
2016-03-30
DOI
10.1063/1.4944998
References
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Related references
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- Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions
- (2013) Yuka Kuwano et al. JAPANESE JOURNAL OF APPLIED PHYSICS
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- (2013) Ming Su et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Negligible carrier freeze-out facilitated by impurity band conduction in highly p-type GaN
- (2012) Brendan Gunning et al. APPLIED PHYSICS LETTERS
- Demonstration of forward inter-band tunneling in GaN by polarization engineering
- (2011) Sriram Krishnamoorthy et al. APPLIED PHYSICS LETTERS
- DC Characterization of Tunnel Diodes Under Stable Non-Oscillatory Circuit Conditions
- (2011) Liquan Wang et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Polarization-engineered GaN/InGaN/GaN tunnel diodes
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- Si Esaki diodes with high peak to valley current ratios
- (2009) M. Oehme et al. APPLIED PHYSICS LETTERS
- GaN-Based RF Power Devices and Amplifiers
- (2008) U.K. Mishra et al. PROCEEDINGS OF THE IEEE
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