ABC-model for interpretation of internal quantum efficiency and its droop in III-nitride LEDs: a review
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Title
ABC-model for interpretation of internal quantum efficiency and its droop in III-nitride LEDs: a review
Authors
Keywords
III-Nitrides, Light-emitting diodes, Recombination , Efficiency droop, ABC-model
Journal
OPTICAL AND QUANTUM ELECTRONICS
Volume 47, Issue 6, Pages 1293-1303
Publisher
Springer Nature
Online
2014-10-24
DOI
10.1007/s11082-014-0042-9
References
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- (2012) Mikhail V Kisin et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
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