Recombination of Shockley partial dislocations by electron beam irradiation in wurtzite GaN

Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

(2018) Shigeyoshi Usami et al.   APPLIED PHYSICS LETTERS

Peculiarities of plastic relaxation of (0001) InGaN epilayers and their consequences for pseudo-substrate application

(2018) J. Moneta et al.   APPLIED PHYSICS LETTERS

Intrinsic luminescence and core structure of freshly introduced a-screw dislocations in n-GaN

(2018) O. Medvedev et al.   JOURNAL OF APPLIED PHYSICS

Expansion of a single Shockley stacking fault in a 4H-SiC (11 2 ¯0) epitaxial layer caused by electron beam irradiation

(2018) Yukari Ishikawa et al.   JOURNAL OF APPLIED PHYSICS

First-principles calculations of threading screw dislocations in AlN and InN

(2018) L. Pizzagalli et al.   PHYSICAL REVIEW MATERIALS

Radiation enhanced basal plane dislocation glide in GaN

(2016) Eugene B. Yakimov et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes

(2016) Atsushi Tanaka et al.   JOURNAL OF APPLIED PHYSICS

Core properties and mobility of the basal screw dislocation in wurtzite GaN: a density functional theory study

(2016) I Belabbas et al.   MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING

Investigations of atomic configurations of 60° basal dislocations in wurtzite GaN film by high-resolution transmission electron microscopy

(2016) Yunjie Chang et al.   PHILOSOPHICAL MAGAZINE LETTERS

GaN-based light-emitting diodes on various substrates: a critical review

(2016) Guoqiang Li et al.   REPORTS ON PROGRESS IN PHYSICS

Movement of basal plane dislocations in GaN during electron beam irradiation

(2015) E. B. Yakimov et al.   APPLIED PHYSICS LETTERS

Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy

(2015) C. Bazioti et al.   JOURNAL OF APPLIED PHYSICS

Electronic structure and metallization effects at threading dislocation cores in GaN

(2014) I. Belabbas et al.   COMPUTATIONAL MATERIALS SCIENCE

Structure and strain relaxation effects of defects in InxGa1−xN epilayers

(2014) S. L. Rhode et al.   JOURNAL OF APPLIED PHYSICS

Gallium nitride devices for power electronic applications

(2013) B Jayant Baliga   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

The effect of dislocations on the efficiency of InGaN/GaN solar cells

(2013) Y. Zhang et al.   SOLAR ENERGY MATERIALS AND SOLAR CELLS

In-situ transmission electron microscopy of partial-dislocation glide in 4H-SiC under electron radiation

(2012) Yutaka Ohno et al.   APPLIED PHYSICS LETTERS

Band Structure and Quantum Confined Stark Effect in InN/GaN superlattices

(2012) I. Gorczyca et al.   CRYSTAL GROWTH & DESIGN

Group III-nitride lasers: a materials perspective

(2011) Matthew T. Hardy et al.   Materials Today

Effect of Eshelby twist on core structure of screw dislocations in molybdenum: atomic structure and electron microscope image simulations

(2011) R. Gröger et al.   PHILOSOPHICAL MAGAZINE

An improved image alignment procedure for high-resolution transmission electron microscopy

(2010) Fang Lin et al.   MICRON

Dislocation core investigation by geometric phase analysis and the dislocation density tensor

(2008) J Kioseoglou et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS