Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes

Contrast analysis of Shockley partial dislocations in 4H-SiC observed by synchrotron Berg–Barrett X-ray topography

(2014) Hirofumi Matsuhata et al.   PHILOSOPHICAL MAGAZINE

Tuning minority-carrier lifetime through stacking fault defects: The case of polytypic SiC

(2012) Bin Chen et al.   APPLIED PHYSICS LETTERS

Analysis of contrasts and identifications of Burgers vectors for basal-plane dislocations and threading edge dislocations in 4H-SiC crystals observed by monochromatic synchrotron X-ray topography in grazing-incidence Bragg-case geometry

(2012) Hirofumi Matsuhata et al.   PHILOSOPHICAL MAGAZINE

Stacking faults created by the combined deflection of threading dislocations of Burgers vector c and c+a during the physical vapor transport growth of 4H–SiC

(2011) M. Dudley et al.   APPLIED PHYSICS LETTERS

Direct observation of basal-plane to threading-edge dislocation conversion in 4H-SiC epitaxy

(2011) Suk Chung et al.   JOURNAL OF APPLIED PHYSICS

Pinning of recombination-enhanced dislocation motion in 4H–SiC: Role of Cu and EH1 complex

(2010) Bin Chen et al.   APPLIED PHYSICS LETTERS

Electrical and Optical Properties of Stacking Faults in 4H-SiC Devices

(2010) Bin Chen et al.   JOURNAL OF ELECTRONIC MATERIALS

Evidence for a general mechanism modulating carrier lifetime in SiC

(2010) Bin Chen et al.   PHYSICAL REVIEW B

Nucleation mechanism of dislocation half-loop arrays in 4H-silicon carbide homoepitaxial layers

(2009) N. Zhang et al.   APPLIED PHYSICS LETTERS

Electron-beam-induced current and cathodoluminescence study of dislocation arrays in 4H-SiC homoepitaxial layers

(2009) Bin Chen et al.   JOURNAL OF APPLIED PHYSICS

On the lattice parameters of silicon carbide

(2009) M. Stockmeier et al.   JOURNAL OF APPLIED PHYSICS

Electron-beam-induced current study of stacking faults and partial dislocations in 4H-SiC Schottky diode

(2008) Bin Chen et al.   APPLIED PHYSICS LETTERS