Peculiarities of plastic relaxation of (0001) InGaN epilayers and their consequences for pseudo-substrate application

Stacking fault domains as sources of a-type threading dislocations in III-nitride heterostructures

(2016) J. Smalc-Koziorowska et al.   APPLIED PHYSICS LETTERS

Interface dislocations in In x Ga1-x N/GaN heterostructures

(2016) Q. T. Li et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Relationship between misfit-dislocation formation and initial threading-dislocation density in GaInN/GaN heterostructures

(2015) Motoaki Iwaya et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Relaxedc-plane InGaN layers for the growth of strain-reduced InGaN quantum wells

(2015) Karine Hestroffer et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Understanding and controlling indium incorporation and surface segregation on InxGa1−xN surfaces: Anab initioapproach

(2014) Andrew Ian Duff et al.   PHYSICAL REVIEW B

Application-oriented nitride substrates: The key to long-wavelength nitride lasers beyond 500 nm

(2010) T. K. Sharma et al.   JOURNAL OF APPLIED PHYSICS

Growth of InGaN and InGaN/InGaN quantum wells by plasma-assisted molecular beam epitaxy

(2008) M. Siekacz et al.   JOURNAL OF CRYSTAL GROWTH