Recombination of Shockley partial dislocations by electron beam irradiation in wurtzite GaN
出版年份 2019 全文链接
标题
Recombination of Shockley partial dislocations by electron beam irradiation in wurtzite GaN
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 126, Issue 16, Pages 165702
出版商
AIP Publishing
发表日期
2019-10-24
DOI
10.1063/1.5121416
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate
- (2018) Shigeyoshi Usami et al. APPLIED PHYSICS LETTERS
- Peculiarities of plastic relaxation of (0001) InGaN epilayers and their consequences for pseudo-substrate application
- (2018) J. Moneta et al. APPLIED PHYSICS LETTERS
- Intrinsic luminescence and core structure of freshly introduced a-screw dislocations in n-GaN
- (2018) O. Medvedev et al. JOURNAL OF APPLIED PHYSICS
- Expansion of a single Shockley stacking fault in a 4H-SiC (11 2 ¯0) epitaxial layer caused by electron beam irradiation
- (2018) Yukari Ishikawa et al. JOURNAL OF APPLIED PHYSICS
- First-principles calculations of threading screw dislocations in AlN and InN
- (2018) L. Pizzagalli et al. PHYSICAL REVIEW MATERIALS
- Radiation enhanced basal plane dislocation glide in GaN
- (2016) Eugene B. Yakimov et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes
- (2016) Atsushi Tanaka et al. JOURNAL OF APPLIED PHYSICS
- Core properties and mobility of the basal screw dislocation in wurtzite GaN: a density functional theory study
- (2016) I Belabbas et al. MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING
- Investigations of atomic configurations of 60° basal dislocations in wurtzite GaN film by high-resolution transmission electron microscopy
- (2016) Yunjie Chang et al. PHILOSOPHICAL MAGAZINE LETTERS
- GaN-based light-emitting diodes on various substrates: a critical review
- (2016) Guoqiang Li et al. REPORTS ON PROGRESS IN PHYSICS
- Movement of basal plane dislocations in GaN during electron beam irradiation
- (2015) E. B. Yakimov et al. APPLIED PHYSICS LETTERS
- Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy
- (2015) C. Bazioti et al. JOURNAL OF APPLIED PHYSICS
- Electronic structure and metallization effects at threading dislocation cores in GaN
- (2014) I. Belabbas et al. COMPUTATIONAL MATERIALS SCIENCE
- Structure and strain relaxation effects of defects in InxGa1−xN epilayers
- (2014) S. L. Rhode et al. JOURNAL OF APPLIED PHYSICS
- Gallium nitride devices for power electronic applications
- (2013) B Jayant Baliga SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- The effect of dislocations on the efficiency of InGaN/GaN solar cells
- (2013) Y. Zhang et al. SOLAR ENERGY MATERIALS AND SOLAR CELLS
- In-situ transmission electron microscopy of partial-dislocation glide in 4H-SiC under electron radiation
- (2012) Yutaka Ohno et al. APPLIED PHYSICS LETTERS
- Band Structure and Quantum Confined Stark Effect in InN/GaN superlattices
- (2012) I. Gorczyca et al. CRYSTAL GROWTH & DESIGN
- Group III-nitride lasers: a materials perspective
- (2011) Matthew T. Hardy et al. Materials Today
- Effect of Eshelby twist on core structure of screw dislocations in molybdenum: atomic structure and electron microscope image simulations
- (2011) R. Gröger et al. PHILOSOPHICAL MAGAZINE
- An improved image alignment procedure for high-resolution transmission electron microscopy
- (2010) Fang Lin et al. MICRON
- Dislocation core investigation by geometric phase analysis and the dislocation density tensor
- (2008) J Kioseoglou et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started