Phase-change memory cycling endurance

Thermal-gradient-driven elemental segregation in Ge2Sb2Te5 phase change memory cells

(2019) Phoebe Yeoh et al.   APPLIED PHYSICS LETTERS

Self-Healing of a Confined Phase Change Memory Device with a Metallic Surfactant Layer

(2018) Yujun Xie et al.   ADVANCED MATERIALS

Single-element glass to record data

(2018) Wei Zhang et al.   NATURE MATERIALS

Monatomic phase change memory

(2018) Martin Salinga et al.   NATURE MATERIALS

Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing

(2017) Feng Rao et al.   SCIENCE

New pathway for the formation of metallic cubic phase Ge-Sb-Te compounds induced by an electric current

(2016) Yong-Jin Park et al.   Scientific Reports

Modeling of Thermoelectric Effects in Phase Change Memory Cells

(2014) Azer Faraclas et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Electrical current-induced gradual failure of crystalline Ge2Sb2Te5 for phase-change memory

(2013) Yong-Jin Park et al.   APPLIED PHYSICS LETTERS

Electrical Wind Force-Driven and Dislocation-Templated Amorphization in Phase-Change Nanowires

(2012) S.-W. Nam et al.   SCIENCE

Voltage polarity effects in Ge2Sb2Te5-based phase change memory devices

(2011) Alvaro Padilla et al.   JOURNAL OF APPLIED PHYSICS

Evidence of Crystallization–Induced Segregation in the Phase Change Material Te-Rich GST

(2011) Anthony Debunne et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

TEM Study on Volume Changes and Void Formation in Ge[sub 2]Sb[sub 2]Te[sub 5] Films, with Repeated Phase Changes

(2010) Kihoon Do et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Phase Change Memory

(2010) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Direct evidence of phase separation in Ge2Sb2Te5 in phase change memory devices

(2009)   APPLIED PHYSICS LETTERS

Atomic migration in molten and crystalline Ge2Sb2Te5 under high electric field

(2009) Tae-Youl Yang et al.   APPLIED PHYSICS LETTERS

Crystallization times of Ge–Te phase change materials as a function of composition

(2009) S. Raoux et al.   APPLIED PHYSICS LETTERS

Degradation of the Reset Switching During Endurance Testing of a Phase-Change Line Cell

(2009) Ludovic Goux et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Phase separation behavior of Ge2Sb2Te5 line structure during electrical stress biasing

(2008) Sung-Wook Nam et al.   APPLIED PHYSICS LETTERS

Thermomechanical properties and mechanical stresses of Ge2Sb2Te5 films in phase-change random access memory

(2008) Il-Mok Park et al.   THIN SOLID FILMS