Evidence of Crystallization–Induced Segregation in the Phase Change Material Te-Rich GST

Phase-change random access memory: A scalable technology

(2010) S. Raoux et al.   IBM JOURNAL OF RESEARCH AND DEVELOPMENT

Overview of candidate device technologies for storage-class memory

(2010) G. W. Burr et al.   IBM JOURNAL OF RESEARCH AND DEVELOPMENT

The impact of film thickness and melt-quenched phase on the phase transition characteristics of Ge2Sb2Te5

(2010) Huai-Yu Cheng et al.   JOURNAL OF APPLIED PHYSICS

Direct evidence of phase separation in Ge2Sb2Te5 in phase change memory devices

(2009)   APPLIED PHYSICS LETTERS

Atomic migration in molten and crystalline Ge2Sb2Te5 under high electric field

(2009) Tae-Youl Yang et al.   APPLIED PHYSICS LETTERS

Degradation of the Reset Switching During Endurance Testing of a Phase-Change Line Cell

(2009) Ludovic Goux et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Characterization of phase change memory materials using phase change bridge devices

(2009) Daniel Krebs et al.   JOURNAL OF APPLIED PHYSICS

Crystallization dynamics of nitrogen-doped Ge2Sb2Te5

(2009) Robert M. Shelby et al.   JOURNAL OF APPLIED PHYSICS

Change of Damage Mechanism by the Frequency of Applied Pulsed DC in the Ge[sub 2]Sb[sub 2]Te[sub 5] Line

(2009) Tae-Youl Yang et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Observation of the Role of Subcritical Nuclei in Crystallization of a Glassy Solid

(2009) B.-S. Lee et al.   SCIENCE

Thermal stress effects of Ge2Sb2Te5 phase change material: Irreversible modification with Ti adhesion layers and segregation of Te

(2008) K.N. Chen et al.   MICROELECTRONIC ENGINEERING