New pathway for the formation of metallic cubic phase Ge-Sb-Te compounds induced by an electric current

Disorder-Induced Localization in Crystalline Pseudo-Binary GeTe-Sb2Te3Alloys between Ge3Sb2Te6and GeTe

(2015) Peter Jost et al.   ADVANCED FUNCTIONAL MATERIALS

Direct Observation of Metal–Insulator Transition in Single-Crystalline Germanium Telluride Nanowire Memory Devices Prior to Amorphization

(2014) Pavan Nukala et al.   NANO LETTERS

Electrical current-induced gradual failure of crystalline Ge2Sb2Te5 for phase-change memory

(2013) Yong-Jin Park et al.   APPLIED PHYSICS LETTERS

Influence of dopants on atomic migration and void formation in molten Ge2Sb2Te5 under high-amplitude electrical pulse

(2012) T.-Y. Yang et al.   ACTA MATERIALIA

Role of vacancies in metal–insulator transitions of crystalline phase-change materials

(2012) W. Zhang et al.   NATURE MATERIALS

Electrical Wind Force-Driven and Dislocation-Templated Amorphization in Phase-Change Nanowires

(2012) S.-W. Nam et al.   SCIENCE

Design Rules for Phase-Change Materials in Data Storage Applications

(2011) Dominic Lencer et al.   ADVANCED MATERIALS

Disorder-induced localization in crystalline phase-change materials

(2011) T. Siegrist et al.   NATURE MATERIALS

Phase Change Materials: Challenges on the Path to a Universal Storage Device

(2011) T. Siegrist et al.   Annual Review of Condensed Matter Physics

Atomic migration in molten and crystalline Ge2Sb2Te5 under high electric field

(2009) Tae-Youl Yang et al.   APPLIED PHYSICS LETTERS