Self-Healing of a Confined Phase Change Memory Device with a Metallic Surfactant Layer

A Phase Change Memory Cell With Metal Nitride Liner as a Resistance Stabilizer to Reduce Read Current Noise for MLC Optimization

(2016) SangBum Kim et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Intrinsically stretchable and healable semiconducting polymer for organic transistors

(2016) Jin Young Oh et al.   NATURE

Stochastic phase-change neurons

(2016) Tomas Tuma et al.   Nature Nanotechnology

Bipolar switching in chalcogenide phase change memory

(2016) N. Ciocchini et al.   Scientific Reports

A Mechanically and Electrically Self-Healing Supercapacitor

(2014) Hua Wang et al.   ADVANCED MATERIALS

Self-healing chemistry enables the stable operation of silicon microparticle anodes for high-energy lithium-ion batteries

(2013) Chao Wang et al.   Nature Chemistry

Beyond von-Neumann Computing with Nanoscale Phase-Change Memory Devices

(2012) C. David Wright et al.   ADVANCED FUNCTIONAL MATERIALS

Electrical Wind Force-Driven and Dislocation-Templated Amorphization in Phase-Change Nanowires

(2012) S.-W. Nam et al.   SCIENCE

In Situ Transmission Electron Microscopy Observation of Nanostructural Changes in Phase-Change Memory

(2011) Stefan Meister et al.   ACS Nano

Role of mechanical stress in the resistance drift of Ge2Sb2Te5 films and phase change memories

(2011) M. Rizzi et al.   APPLIED PHYSICS LETTERS

Voltage polarity effects in Ge2Sb2Te5-based phase change memory devices

(2011) Alvaro Padilla et al.   JOURNAL OF APPLIED PHYSICS

Storage-class memory: The next storage system technology

(2010) R. F. Freitas et al.   IBM JOURNAL OF RESEARCH AND DEVELOPMENT

Overview of candidate device technologies for storage-class memory

(2010) G. W. Burr et al.   IBM JOURNAL OF RESEARCH AND DEVELOPMENT

Phase Change Memory

(2010) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Ga2Te3Sb5-A Candidate for Fast and Ultralong Retention Phase-Change Memory

(2009) Kin-Fu Kao et al.   ADVANCED MATERIALS

Analysis of the electric field induced elemental separation of Ge2Sb2Te5 by transmission electron microscopy

(2009) Dongmin Kang et al.   APPLIED PHYSICS LETTERS

Sulfur-Induced PtSi:C/Si:C Schottky Barrier Height Lowering for Realizing N-Channel FinFETs With Reduced External Resistance

(2009) R.T.-P. Lee et al.   IEEE ELECTRON DEVICE LETTERS

Degradation of the Reset Switching During Endurance Testing of a Phase-Change Line Cell

(2009) Ludovic Goux et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Formation of Large Voids in the Amorphous Phase-Change MemoryGe2Sb2Te5Alloy

(2009) Zhimei Sun et al.   PHYSICAL REVIEW LETTERS

Void Formation Induced Electrical Switching in Phase-Change Nanowires

(2008) Stefan Meister et al.   NANO LETTERS