Integration of Hexagonal Boron Nitride with Quasi-freestanding Epitaxial Graphene: Toward Wafer-Scale, High-Performance Devices

Published 2012 View Full Article

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Title
Integration of Hexagonal Boron Nitride with Quasi-freestanding Epitaxial Graphene: Toward Wafer-Scale, High-Performance Devices
Authors
Keywords
-
Journal
ACS Nano
Volume 6, Issue 6, Pages 5234-5241
Publisher
American Chemical Society (ACS)
Online
2012-04-28
DOI
10.1021/nn300996t

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