Resistive-switching mechanism of transparent nonvolatile memory device based on gallium zinc oxide

Bipolar resistance switching in high-performance Cu/ZnO:Mn/Pt nonvolatile memories: active region and influence of Joule heating

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Effects of the compliance current on the resistive switching behavior of TiO2 thin films

(2009) X. Cao et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Resistive switching in nanostructured thin films

(2009) H. Silva et al.   APPLIED PHYSICS LETTERS

Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application

(2009) Yu Chao Yang et al.   NANO LETTERS

Mechanism for bipolar switching in aPt/TiO2/Ptresistive switching cell

(2009) Doo Seok Jeong et al.   PHYSICAL REVIEW B

Reversible resistive switching behaviors in NiO nanowires

(2008) Sung In Kim et al.   APPLIED PHYSICS LETTERS

Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories

(2008) Nuo Xu et al.   APPLIED PHYSICS LETTERS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

Bipolar switching behavior in TiN/ZnO/Pt resistive nonvolatile memory with fast switching and long retention

(2008) N Xu et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY