Microscopic origin of read current noise in TaOx-based resistive switching memory by ultra-low temperature measurement

Random telegraph noise analysis in AlOx/WOy resistive switching memories

(2014) Ye Zhang et al.   APPLIED PHYSICS LETTERS

Origin of the current discretization in deep reset states of an Al2O3/Cu-based conductive-bridging memory, and impact on state level and variability

(2014) A. Belmonte et al.   APPLIED PHYSICS LETTERS

Metallic to hopping conduction transition in Ta2O5−x/TaOy resistive switching device

(2014) Ye Zhang et al.   APPLIED PHYSICS LETTERS

On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime

(2014) L. Goux et al.   JOURNAL OF APPLIED PHYSICS

Low temperature reduction in Ta–O and Nb–O thin films

(2014) A Nowak et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Modeling the Impact of Reset Depth on Vacancy-Induced Filament Perturbations in ${\rm HfO}_{2}$ RRAM

(2013) Nagarajan Raghavan et al.   IEEE ELECTRON DEVICE LETTERS

Resistive switching mechanisms relating to oxygen vacancies migration in both interfaces in Ti/HfOx/Pt memory devices

(2013) Y. S. Lin et al.   JOURNAL OF APPLIED PHYSICS

Random telegraph noise and resistance switching analysis of oxide based resistive memory

(2013) Shinhyun Choi et al.   Nanoscale

In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure

(2013) Gyeong-Su Park et al.   Nature Communications

Electronic structure and transport measurements of amorphous transition-metal oxides: observation of Fermi glass behavior

(2012) I. Goldfarb et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Investigation of One-Dimensional Thickness Scaling on $ \hbox{Cu/HfO}_{x}/\hbox{Pt}$ Resistive Switching Device Performance

(2012) Ming Wang et al.   IEEE ELECTRON DEVICE LETTERS

Modeling of electron conduction in contact resistive random access memory devices as random telegraph noise

(2012) Yuan Heng Tseng et al.   JOURNAL OF APPLIED PHYSICS

Nitrogen-induced improvement of resistive switching uniformity in a HfO2-based RRAM device

(2012) Hongwei Xie et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities

(2011) Tibor Grasser   MICROELECTRONICS RELIABILITY

Sub-nanosecond switching of a tantalum oxide memristor

(2011) Antonio C Torrezan et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories

(2010) Daniele Ielmini et al.   APPLIED PHYSICS LETTERS

High switching endurance in TaOx memristive devices

(2010) J. Joshua Yang et al.   APPLIED PHYSICS LETTERS

Probing Cu doped Ge0.3Se0.7 based resistance switching memory devices with random telegraph noise

(2010) R. Soni et al.   JOURNAL OF APPLIED PHYSICS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today