High-Performance a-InGaZnO Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric

Title
High-Performance a-InGaZnO Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric
Authors
Keywords
Amorphous In-Ga-Zn-O, Thin-film transistor, Room temperature, Atomic layer deposition, Hydrogen-rich Al<sub>2</sub>O<sub>3</sub>
Journal
Nanoscale Research Letters
Volume 14, Issue 1, Pages -
Publisher
Springer Nature
Online
2019-04-02
DOI
10.1186/s11671-019-2959-1

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