High-Performance a-InGaZnO Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric
Published 2019 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
High-Performance a-InGaZnO Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric
Authors
Keywords
Amorphous In-Ga-Zn-O, Thin-film transistor, Room temperature, Atomic layer deposition, Hydrogen-rich Al<sub>2</sub>O<sub>3</sub>
Journal
Nanoscale Research Letters
Volume 14, Issue 1, Pages -
Publisher
Springer Nature
Online
2019-04-02
DOI
10.1186/s11671-019-2959-1
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Analysis of Ultrahigh Apparent Mobility in Oxide Field-Effect Transistors
- (2019) Changdong Chen et al. Advanced Science
- All-sputtered, flexible, bottom-gate IGZO/Al2O3 bi-layer thin film transistors on PEN fabricated by a fully room temperature process
- (2017) Zeke Zheng et al. Journal of Materials Chemistry C
- Rational Hydrogenation for Enhanced Mobility and High Reliability on ZnO-based Thin Film Transistors: From Simulation to Experiment
- (2016) Lei Xu et al. ACS Applied Materials & Interfaces
- Low Temperature Fabrication of an Amorphous InGaZnO Thin-Film Transistor With a sol-gel SiO2Gate Dielectric
- (2016) Chih-Chieh Hsu et al. Journal of Display Technology
- A solution-processed silicon oxide gate dielectric prepared at a low temperature via ultraviolet irradiation for metal oxide transistors
- (2016) Hyeon Joo Seul et al. Journal of Materials Chemistry C
- Low-Voltage a-InGaZnO Thin-Film Transistors With Anodized Thin HfO2 Gate Dielectric
- (2015) Yang Shao et al. IEEE ELECTRON DEVICE LETTERS
- Impact of the Low Temperature Gate Dielectrics on Device Performance and Bias-Stress Stabilities of a-IGZO Thin-Film Transistors
- (2015) M. Nag et al. ECS Journal of Solid State Science and Technology
- The effects of buffer layers on the performance and stability of flexible InGaZnO thin film transistors on polyimide substrates
- (2014) Kyung-Chul Ok et al. APPLIED PHYSICS LETTERS
- Origin of major donor states in In–Ga–Zn oxide
- (2014) Motoki Nakashima et al. JOURNAL OF APPLIED PHYSICS
- Crystalline In–Ga–Zn–O Density of States and Energy Band Structure Calculation Using Density Function Theory
- (2013) Charlene Chen et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Achieving High Field-Effect Mobility in Amorphous Indium-Gallium-Zinc Oxide by Capping a Strong Reduction Layer
- (2012) Hsiao-Wen Zan et al. ADVANCED MATERIALS
- Amorphous InGaZnO Thin-Film Transistors—Part II: Modeling and Simulation of Negative Bias Illumination Stress-Induced Instability
- (2012) Yongsik Kim et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Thin-film electronics by atomic layer deposition
- (2011) David H. Levy et al. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- Review of recent developments in amorphous oxide semiconductor thin-film transistor devices
- (2011) Joon Seok Park et al. THIN SOLID FILMS
- Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
- (2010) S. E. Potts et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors
- (2010) S.W. Tsao et al. SOLID-STATE ELECTRONICS
- Application of DC Magnetron Sputtering to Deposition of InGaZnO Films for Thin Film Transistor Devices
- (2009) Yeon-Keon Moon et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- High performance indium gallium zinc oxide thin film transistors fabricated on polyethylene terephthalate substrates
- (2008) Wantae Lim et al. APPLIED PHYSICS LETTERS
Create your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create NowBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started