Active Electrode Redox Reactions and Device Behavior in ECM Type Resistive Switching Memories
Published 2019 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Active Electrode Redox Reactions and Device Behavior in ECM Type Resistive Switching Memories
Authors
Keywords
-
Journal
Advanced Electronic Materials
Volume -, Issue -, Pages 1800933
Publisher
Wiley
Online
2019-03-06
DOI
10.1002/aelm.201800933
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Nanoarchitectonics for Controlling the Number of Dopant Atoms in Solid Electrolyte Nanodots
- (2018) Alpana Nayak et al. ADVANCED MATERIALS
- Memristor crossbar arrays with 6-nm half-pitch and 2-nm critical dimension
- (2018) Shuang Pi et al. Nature Nanotechnology
- Total-Ionizing-Dose Effects on Resistance Stability of Programmable Metallization Cell Based Memory and Selectors
- (2017) W. Chen et al. IEEE TRANSACTIONS ON NUCLEAR SCIENCE
- Flexible three-dimensional artificial synapse networks with correlated learning and trainable memory capability
- (2017) Chaoxing Wu et al. Nature Communications
- Subquantum conductive-bridge memory
- (2016) John R. Jameson et al. APPLIED PHYSICS LETTERS
- Electrochemistry at the Nanoscale
- (2016) Ilia Valov et al. Nanoscale
- Training and operation of an integrated neuromorphic network based on metal-oxide memristors
- (2015) M. Prezioso et al. NATURE
- Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems
- (2015) Anja Wedig et al. Nature Nanotechnology
- Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology
- (2014) Haitao Sun et al. ADVANCED FUNCTIONAL MATERIALS
- Generic Relevance of Counter Charges for Cation-Based Nanoscale Resistive Switching Memories
- (2013) Stefan Tappertzhofen et al. ACS Nano
- Nanoionic transport and electrochemical reactions in resistively switching silicon dioxide
- (2012) Stefan Tappertzhofen et al. Nanoscale
- Memristive devices for computing
- (2012) J. Joshua Yang et al. Nature Nanotechnology
- Thermal-stability optimization of Al2O3/Cu–Te based conductive-bridging random access memory systems
- (2012) L. Goux et al. THIN SOLID FILMS
- Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches
- (2011) Tohru Tsuruoka et al. ADVANCED FUNCTIONAL MATERIALS
- Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von-Neumann Computers
- (2011) Tsuyoshi Hasegawa et al. ADVANCED MATERIALS
- Redox processes in silicon dioxide thin films using copper microelectrodes
- (2011) S. Tappertzhofen et al. APPLIED PHYSICS LETTERS
- A study of resistive switching effects on a thin FeOx transition layer produced at the oxide/iron interface of TiN/SiO2/Fe-contented electrode structures
- (2010) Li-Wei Feng et al. APPLIED PHYSICS LETTERS
- Electrode kinetics of Cu–SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories
- (2009) C. Schindler et al. APPLIED PHYSICS LETTERS
Create your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create NowAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started