Identification of a tri-carbon defect and its relation to the ultraviolet absorption in aluminum nitride

Preparation of Bulk AlN Seeds by Spontaneous Nucleation of Freestanding Crystals

(2013) Carsten Hartmann et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

On the origin of the 265 nm absorption band in AlN bulk crystals

(2012) Ramón Collazo et al.   APPLIED PHYSICS LETTERS

Concentration of point defects in wurtzite AlN: A hybrid functional study

(2012) Leonardo Silvestri et al.   EPL

Growth of bulk AlN single crystals with low oxygen content taking into account thermal and kinetic effects of oxygen-related gaseous species

(2012) C. Guguschev et al.   JOURNAL OF CRYSTAL GROWTH

Advances in group III-nitride-based deep UV light-emitting diode technology

(2010) M Kneissl et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Pseudomorphic growth of thick n-type AlxGa1−xN layers on low-defect-density bulk AlN substrates for UV LED applications

(2009) J.R. Grandusky et al.   JOURNAL OF CRYSTAL GROWTH

The progress of AlN bulk growth and epitaxy for electronic applications

(2009) Stephan G. Mueller et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Different optical absorption edges in AlN bulk crystals grown in m- and c-orientations

(2008) P. Lu et al.   APPLIED PHYSICS LETTERS