Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes

Title
Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 5, Pages 051113
Publisher
AIP Publishing
Online
2008-08-08
DOI
10.1063/1.2969402

Ask authors/readers for more resources

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search