Physically based Diagonal Treatment of the Self-Energy of Polar Optical Phonons: Performance Assessment of III-V Double-Gate Transistors

Size and temperature dependence of the electron–phonon scattering by donors in nanowire transistors

(2016) M. Bescond et al.   SOLID-STATE ELECTRONICS

On the local approximation of the electron–photon interaction self-energy

(2016) Nicolas Cavassilas et al.   Journal of Computational Electronics

Influence of uniaxial strain in Si and Ge p-type double-gate metal-oxide-semiconductor field effect transistors

(2015) Manel Moussavou et al.   JOURNAL OF APPLIED PHYSICS

Quantum Modeling of the Carrier Mobility in FDSOI Devices

(2014) Viet-Hung Nguyen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Strain scaling for CMOS

(2014) S.W. Bedell et al.   MRS BULLETIN

Theoretical comparison of Si, Ge, and GaAs ultrathin p-type double-gate metal oxide semiconductor transistors

(2013) Elias Dib et al.   JOURNAL OF APPLIED PHYSICS

Ultrathin-Body High-Mobility InAsSb-on-Insulator Field-Effect Transistors

(2012) Hui Fang et al.   IEEE ELECTRON DEVICE LETTERS

Performance Comparisons of III–V and Strained-Si in Planar FETs and Nonplanar FinFETs at Ultrashort Gate Length (12 nm)

(2012) Seung Hyun Park et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Considerations for Ultimate CMOS Scaling

(2012) K. J. Kuhn   IEEE TRANSACTIONS ON ELECTRON DEVICES

Enhancing hole mobility in III-V semiconductors

(2012) Aneesh Nainani et al.   JOURNAL OF APPLIED PHYSICS

A III–V nanowire channel on silicon for high-performance vertical transistors

(2012) Katsuhiro Tomioka et al.   NATURE

Effects of Surface Orientation on the Performance of Idealized III–V Thin-Body Ballistic n-MOSFETs

(2011) Raseong Kim et al.   IEEE ELECTRON DEVICE LETTERS

GaSb Inversion-Mode PMOSFETs With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric

(2011) Min Xu et al.   IEEE ELECTRON DEVICE LETTERS

Multiband quantum transport simulations of ultimate p-type double-gate transistors: Effects of hole-phonon scattering

(2011) Nicolas Cavassilas et al.   JOURNAL OF APPLIED PHYSICS

Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials

(2011) M. Heyns et al.   MRS BULLETIN

Nanometre-scale electronics with III–V compound semiconductors

(2011) Jesús A. del Alamo   NATURE

Multiband quantum transport simulations of ultimate p-type double-gate transistors: Influence of the channel orientation

(2010) Nicolas Cavassilas et al.   APPLIED PHYSICS LETTERS

III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interface

(2010) Masafumi Yokoyama et al.   APPLIED PHYSICS LETTERS

Benchmarking of III–V n-MOSFET Maturity and Feasibility for Future CMOS

(2010) Gerben Doornbos et al.   IEEE ELECTRON DEVICE LETTERS

Electronic band structure calculations for biaxially strained Si, Ge, and III–V semiconductors

(2010) Jiseok Kim et al.   JOURNAL OF APPLIED PHYSICS

Full-quantum simulation of hole transport and band-to-band tunneling in nanowires using the k⋅p method

(2009) Mincheol Shin   JOURNAL OF APPLIED PHYSICS

Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering

(2009) Mathieu Luisier et al.   PHYSICAL REVIEW B

30-nm InAs Pseudomorphic HEMTs on an InP Substrate With a Current-Gain Cutoff Frequency of 628 GHz

(2008) Dae-Hyun Kim et al.   IEEE ELECTRON DEVICE LETTERS

Electron transport in silicon nanowires: The role of acoustic phonon confinement and surface roughness scattering

(2008) E. B. Ramayya et al.   JOURNAL OF APPLIED PHYSICS

Microscopic nonequilibrium theory of quantum well solar cells

(2008) U. Aeberhard et al.   PHYSICAL REVIEW B