Electronic band structure calculations for biaxially strained Si, Ge, and III–V semiconductors

Published 2010 View Full Article

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Title
Electronic band structure calculations for biaxially strained Si, Ge, and III–V semiconductors
Authors
Keywords
-
Journal
JOURNAL OF APPLIED PHYSICS
Volume 108, Issue 1, Pages 013710
Publisher
AIP Publishing
Online
2010-07-12
DOI
10.1063/1.3437655

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