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Title
Resistive switching effects in oxide sandwiched structures
Authors
Keywords
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Journal
Frontiers of Materials Science
Volume 6, Issue 3, Pages 183-206
Publisher
Springer Nature
Online
2012-07-07
DOI
10.1007/s11706-012-0170-8
References
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- (2011) Cheng Zou et al. Chinese Physics B
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- (2011) Yoon Cheol Bae et al. CURRENT APPLIED PHYSICS
- Electrode dependence of filament formation in HfO2 resistive-switching memory
- (2011) Kuan-Liang Lin et al. JOURNAL OF APPLIED PHYSICS
- Nonvolatile bistable resistive switching in a new polyimide bearing 9-phenyl-9H-carbazole pendant
- (2011) Benlin Hu et al. JOURNAL OF MATERIALS CHEMISTRY
- Microstructure dependence of leakage and resistive switching behaviours in Ce-doped BiFeO3thin films
- (2011) Xiaojian Zhu et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
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- (2011) S. Larentis et al. MICROELECTRONIC ENGINEERING
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- (2011) Yingtao Li et al. NANOTECHNOLOGY
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- Nonvolatile bipolar resistance switching effects in multiferroic BiFeO3 thin films on LaNiO3-electrodized Si substrates
- (2010) Xinman Chen et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
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- Nonvolatile resistive switching memory based on amorphous carbon
- (2010) F. Zhuge et al. APPLIED PHYSICS LETTERS
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- (2010) Kuibo Yin et al. APPLIED PHYSICS LETTERS
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- (2010) Z Fang et al. IEEE ELECTRON DEVICE LETTERS
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- Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications
- (2010) Hu Young Jeong et al. NANO LETTERS
- Resistive switching memory: observations with scanning probe microscopy
- (2010) Min Hwan Lee et al. Nanoscale
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- (2009) C. L. He et al. APPLIED PHYSICS LETTERS
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