Effects of O3 and H2O as oxygen sources on the atomic layer deposition of HfO2 gate dielectrics at different deposition temperatures

Chemical structures and electrical properties of atomic layer deposited HfO2 thin films grown at an extremely low temperature (≤100°C) using O3 as an oxygen source

(2013) Jeong Hwan Kim et al.   APPLIED SURFACE SCIENCE

Multiple Proton Diffusion and Film Densification in Atomic Layer Deposition Modeled by Density Functional Theory

(2013) Mahdi Shirazi et al.   CHEMISTRY OF MATERIALS

Stabilization of Tetragonal HfO2 under Low Active Oxygen Source Environment in Atomic Layer Deposition

(2012) Deok-Yong Cho et al.   CHEMISTRY OF MATERIALS

Gate Engineering in TiN/La/TiN and TiLaN Metal Layers on Atomic-Layer-Deposited $\hbox{HfO}_{2}/\hbox{Si}$

(2012) Hyo Kyeom Kim et al.   IEEE ELECTRON DEVICE LETTERS

Interfacial and electrical properties of HfO2gate dielectrics grown on GaAs by atomic layer deposition using different oxidants

(2012) Young-Chul Byun et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Properties of Atomic Layer Deposited HfO2Films on Ge Substrates Depending on Process Temperatures

(2012) Hyung-Suk Jung et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Interactive metal ion–silicon oxidation/reduction processes on fumed silica

(2012) J. Wang et al.   RSC Advances

The Impact of Carbon Concentration on the Crystalline Phase and Dielectric Constant of Atomic Layer Deposited HfO2Films on Ge Substrate

(2012) Hyung-Suk Jung et al.   ECS Journal of Solid State Science and Technology

Dependence of optimized annealing temperature for tetragonal phase formation on the Si concentration of atomic-layer-deposited Hf-silicate film

(2011) Hyo Kyeom Kim et al.   JOURNAL OF APPLIED PHYSICS

First principles study of the structural, electronic, and dielectric properties of amorphous HfO2

(2011) Tsung-Ju Chen et al.   JOURNAL OF APPLIED PHYSICS

Heteroepitaxy of single-crystal LaLuO3 on GaAs(111)A by atomic layer deposition

(2010) Yiqun Liu et al.   APPLIED PHYSICS LETTERS

O3-based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substrates

(2010) L. Lamagna et al.   JOURNAL OF APPLIED PHYSICS

Increasing permittivity in HfZrO thin films by surface manipulation

(2009) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Size-dependent polymorphism in HfO2 nanotubes and nanoscale thin films

(2009) Michael Shandalov et al.   JOURNAL OF APPLIED PHYSICS

Growth and phase stabilization of HfO2 thin films by ALD using novel precursors

(2009) Jaakko Niinistö et al.   JOURNAL OF CRYSTAL GROWTH

H[sub 2]O- and O[sub 3]-Based Atomic Layer Deposition of High-κ Dielectric Films on GeO[sub 2] Passivation Layers

(2009) A. Delabie et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Impact of Precursor Chemistry and Process Conditions on the Scalability of ALD HfO[sub 2] Gate Dielectrics

(2009) Johan Swerts et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Investigation of interfacial layer development between thin Al2O3 films grown using atomic layer deposition and Si(100), Ge(100), or GaAs(100)

(2009) L. Lamagna et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

The effect of dopants on the dielectric constant of HfO[sub 2] and ZrO[sub 2] from first principles

(2008) Dominik Fischer et al.   APPLIED PHYSICS LETTERS

Electrical properties of La2O3 and HfO2∕La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices

(2008) G. Mavrou et al.   JOURNAL OF APPLIED PHYSICS

Structural, electronic and magnetic properties of the surfaces of tetragonal and cubic HfO2

(2008) J I Beltrán et al.   NEW JOURNAL OF PHYSICS

Band offsets of ultrathin high-κoxide films with Si

(2008) Eric Bersch et al.   PHYSICAL REVIEW B

Passivation of Ge(100)∕GeO[sub 2]∕high-κ Gate Stacks Using Thermal Oxide Treatments

(2007) F. Bellenger et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY