Impact of Precursor Chemistry and Process Conditions on the Scalability of ALD HfO[sub 2] Gate Dielectrics

Published 2009 View Full Article

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Title
Impact of Precursor Chemistry and Process Conditions on the Scalability of ALD HfO[sub 2] Gate Dielectrics
Authors
Keywords
-
Journal
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume 157, Issue 1, Pages G26
Publisher
The Electrochemical Society
Online
2009-12-04
DOI
10.1149/1.3258664

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