The Impact of Carbon Concentration on the Crystalline Phase and Dielectric Constant of Atomic Layer Deposited HfO2Films on Ge Substrate

Properties of Atomic Layer Deposited HfO2Films on Ge Substrates Depending on Process Temperatures

(2012) Hyung-Suk Jung et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Nondestructive investigation of interface states in high-k oxide films on Ge substrate using X-ray absorption spectroscopy

(2012) Deok-Yong Cho et al.   Physica Status Solidi-Rapid Research Letters

Impacts of Zr Composition in $\hbox{Hf}_{1-x} \hbox{Zr}_{x}\hbox{O}_{y}$ Gate Dielectrics on Their Crystallization Behavior and Bias-Temperature-Instability Characteristics

(2011) Hyung-Suk Jung et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

First principles study of the structural, electronic, and dielectric properties of amorphous HfO2

(2011) Tsung-Ju Chen et al.   JOURNAL OF APPLIED PHYSICS

Permittivity Enhanced Atomic Layer Deposited HfO2Thin Films Manipulated by a Rutile TiO2Interlayer

(2010) Minha Seo et al.   CHEMISTRY OF MATERIALS

Structural properties and electronic structure ofHfO2-ZrO2composite films

(2010) Deok-Yong Cho et al.   PHYSICAL REVIEW B

Germanium-induced stabilization of a very high-k zirconia phase in ZrO2/GeO2 gate stacks

(2008) P. Tsipas et al.   APPLIED PHYSICS LETTERS

The effect of dopants on the dielectric constant of HfO[sub 2] and ZrO[sub 2] from first principles

(2008) Dominik Fischer et al.   APPLIED PHYSICS LETTERS

Atomic Layer Deposition of ZrO2 Thin Films with High Dielectric Constant on TiN Substrates

(2008) Seong Keun Kim et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Combined experimental and theoretical study of thin hafnia films

(2008) X. Luo et al.   PHYSICAL REVIEW B

First-principles study on doping and phase stability ofHfO2

(2008) Choong-Ki Lee et al.   PHYSICAL REVIEW B

Passivation of Ge(100)∕GeO[sub 2]∕high-κ Gate Stacks Using Thermal Oxide Treatments

(2007) F. Bellenger et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY