A HfO2-Based Complementary Switching Crossbar Adder

Realization of Boolean Logic Functionality Using Redox-Based Memristive Devices

(2015) Anne Siemon et al.   ADVANCED FUNCTIONAL MATERIALS

A Complementary Resistive Switch-Based Crossbar Array Adder

(2015) Anne Siemon et al.   IEEE Journal on Emerging and Selected Topics in Circuits and Systems

Simulation and comparison of two sequential logic-in-memory approaches using a dynamic electrochemical metallization cell model

(2014) S. Ferch et al.   MICROELECTRONICS JOURNAL

Modeling the Impact of Reset Depth on Vacancy-Induced Filament Perturbations in ${\rm HfO}_{2}$ RRAM

(2013) Nagarajan Raghavan et al.   IEEE ELECTRON DEVICE LETTERS

Current Compliance-Dependent Nonlinearity in ${\rm TiO}_{2}$ ReRAM

(2013) Florian Lentz et al.   IEEE ELECTRON DEVICE LETTERS

Evolution of the shape of the conducting channel in complementary resistive switching transition metal oxides

(2013) Kyung Jean Yoon et al.   Nanoscale

Implication logic gates using spin-transfer-torque-operated magnetic tunnel junctions for intrinsic logic-in-memory

(2013) Hiwa Mahmoudi et al.   SOLID-STATE ELECTRONICS

Analysis of Complementary RRAM Switching

(2012) Dirk J. Wouters et al.   IEEE ELECTRON DEVICE LETTERS

Uniform Complementary Resistive Switching in Tantalum Oxide Using Current Sweeps

(2012) S. Schmelzer et al.   IEEE ELECTRON DEVICE LETTERS

Complementary Switching in Oxide-Based Bipolar Resistive-Switching Random Memory

(2012) Federico Nardi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Beyond von Neumann—logic operations in passive crossbar arrays alongside memory operations

(2012) E Linn et al.   NANOTECHNOLOGY

Oxygen Ion Drift-Induced Complementary Resistive Switching in Homo TiOx/TiOy/TiOxand Hetero TiOx/TiON/TiOxTriple Multilayer Frameworks

(2011) Yoon Cheol Bae et al.   ADVANCED FUNCTIONAL MATERIALS

Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von-Neumann Computers

(2011) Tsuyoshi Hasegawa et al.   ADVANCED MATERIALS

Excellent Selector Characteristics of Nanoscale $ \hbox{VO}_{2}$ for High-Density Bipolar ReRAM Applications

(2011) Myungwoo Son et al.   IEEE ELECTRON DEVICE LETTERS

Dependence of optimized annealing temperature for tetragonal phase formation on the Si concentration of atomic-layer-deposited Hf-silicate film

(2011) Hyo Kyeom Kim et al.   JOURNAL OF APPLIED PHYSICS

Sub-nanosecond switching of a tantalum oxide memristor

(2011) Antonio C Torrezan et al.   NANOTECHNOLOGY

‘Memristive’ switches enable ‘stateful’ logic operations via material implication

(2010) Julien Borghetti et al.   NATURE

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS

A Family of Electronically Reconfigurable Nanodevices

(2009) J. Joshua Yang et al.   ADVANCED MATERIALS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS