- Home
- Publications
- Publication Search
- Publication Details
Title
Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors
Authors
Keywords
-
Journal
Scientific Reports
Volume 6, Issue 1, Pages -
Publisher
Springer Nature
Online
2016-06-27
DOI
10.1038/srep28515
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Can Homojunction Tunnel FETs Scale Below 10 nm?
- (2016) Hesameddin Ilatikhameneh et al. IEEE ELECTRON DEVICE LETTERS
- From Fowler–Nordheim to Nonequilibrium Green’s Function Modeling of Tunneling
- (2016) Hesameddin Ilatikhameneh et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET
- (2016) Fan W. Chen et al. IEEE Journal of the Electron Devices Society
- Dielectric Engineered Tunnel Field-Effect Transistor
- (2015) Hesameddin Ilatikhameneh et al. IEEE ELECTRON DEVICE LETTERS
- A predictive analytic model for high-performance tunneling field-effect transistors approaching non-equilibrium Green's function simulations
- (2015) Ramon B. Salazar et al. JOURNAL OF APPLIED PHYSICS
- Phosphorene: Fabrication, Properties, and Applications
- (2015) Liangzhi Kou et al. Journal of Physical Chemistry Letters
- A subthermionic tunnel field-effect transistor with an atomically thin channel
- (2015) Deblina Sarkar et al. NATURE
- Native point defects in few-layer phosphorene
- (2015) V. Wang et al. PHYSICAL REVIEW B
- Tight-binding analysis of Si and GaAs ultrathin bodies with subatomic wave-function resolution
- (2015) Yaohua P. Tan et al. PHYSICAL REVIEW B
- Few-Layer Black Phosphorus Field-Effect Transistors with Reduced Current Fluctuation
- (2014) Junhong Na et al. ACS Nano
- Extraordinary Photoluminescence and Strong Temperature/Angle-Dependent Raman Responses in Few-Layer Phosphorene
- (2014) Shuang Zhang et al. ACS Nano
- Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility
- (2014) Han Liu et al. ACS Nano
- Transistor roadmap projection using predictive full-band atomistic modeling
- (2014) M. Salmani-Jelodar et al. APPLIED PHYSICS LETTERS
- Two-Dimensional Tunnel Transistors Based on ${\rm Bi}_{2}{\rm Se}_{3}$ Thin Film
- (2014) Qin Zhang et al. IEEE ELECTRON DEVICE LETTERS
- Tunable Transport Gap in Phosphorene
- (2014) Saptarshi Das et al. NANO LETTERS
- Electronics based on two-dimensional materials
- (2014) Gianluca Fiori et al. Nature Nanotechnology
- Isolation and characterization of few-layer black phosphorus
- (2014) Andres Castellanos-Gomez et al. 2D Materials
- Figure of merit for and identification of sub-60 mV/decade devices
- (2013) William G. Vandenberghe et al. APPLIED PHYSICS LETTERS
- Efficient and realistic device modeling from atomic detail to the nanoscale
- (2013) J. E. Fonseca et al. Journal of Computational Electronics
- Complex Band Structures: From Parabolic to Elliptic Approximation
- (2011) Ximeng Guan et al. IEEE ELECTRON DEVICE LETTERS
- NEMO5: A Parallel Multiscale Nanoelectronics Modeling Tool
- (2011) Sebastian Steiger et al. IEEE TRANSACTIONS ON NANOTECHNOLOGY
- Tunnel field-effect transistors as energy-efficient electronic switches
- (2011) Adrian M. Ionescu et al. NATURE
- Direct observation of a widely tunable bandgap in bilayer graphene
- (2009) Yuanbo Zhang et al. NATURE
Find the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
SearchAdd your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload Now