标题
Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors
作者
关键词
-
出版物
Scientific Reports
Volume 6, Issue 1, Pages -
出版商
Springer Nature
发表日期
2016-06-27
DOI
10.1038/srep28515
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Can Homojunction Tunnel FETs Scale Below 10 nm?
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