Journal
IEEE ELECTRON DEVICE LETTERS
Volume 36, Issue 10, Pages 1097-1100Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2015.2474147
Keywords
TFETs; TMDs; dielectric engineering; electrical doping; high-k; low-k; NEGF; WSe2; WTe2
Categories
Funding
- Center for Low Energy Systems Technology (LEAST), one of six centers of STARnet
- MARCO
- DARPA
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The dielectric engineered tunnel field-effect transistor (DE-TFET) as a high-performance steep transistor is proposed. In this device, a combination of high-k and low-k dielectrics results in a high electric field at the tunnel junction. As a result, a record ON-current of similar to 1000 mu A/mu m and a subthreshold swing (SS) below 20 mV/decade are predicted for WTe2 DE-TFET. The proposed TFET works based on a homojunction channel and electrically doped contacts both of which are immune to interface states, dopant fluctuations, and dopant states in the bandgap, which typically deteriorate the OFF-state performance and SS in the conventional TFETs.
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