Band alignment and Schottky behaviour of InN/GaN heterostructure grown by low-temperature low-energy nitrogen ion bombardment
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Title
Band alignment and Schottky behaviour of InN/GaN heterostructure grown by low-temperature low-energy nitrogen ion bombardment
Authors
Keywords
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Journal
RSC Advances
Volume 4, Issue 52, Pages 27308-27314
Publisher
Royal Society of Chemistry (RSC)
Online
2014-06-10
DOI
10.1039/c4ra02533d
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Note: Only part of the references are listed.- Optical and structural characterization of nitrogen-rich InN: Transition from nearly intrinsic to strongly n-type degenerate with temperature
- (2013) Nhung Hong Tran et al. APPLIED PHYSICS LETTERS
- Surface states and electronic structure of polar and nonpolar InN – An in situ photoelectron spectroscopy study
- (2013) A. Eisenhardt et al. APPLIED PHYSICS LETTERS
- Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
- (2013) Neeraj Nepal et al. CRYSTAL GROWTH & DESIGN
- Optical bandgap and near surface band bending in degenerate InN films grown by molecular beam epitaxy
- (2013) Malleswararao Tangi et al. JOURNAL OF APPLIED PHYSICS
- p-Type InN Nanowires
- (2013) S. Zhao et al. NANO LETTERS
- High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy
- (2012) Xinqiang Wang et al. Applied Physics Express
- Is electron accumulation universal at InN polar surfaces?
- (2011) APPLIED PHYSICS LETTERS
- Hole mobility in wurtzite InN
- (2011) N. Ma et al. APPLIED PHYSICS LETTERS
- Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes
- (2011) Basanta Roul et al. JOURNAL OF APPLIED PHYSICS
- Valence band offset of wurtzite InN/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy
- (2011) Zhiwei Li et al. Nanoscale Research Letters
- Photogated transistor of III-nitride nanorods
- (2010) H. W. Seo et al. APPLIED PHYSICS LETTERS
- Surface Band-Gap Narrowing in Quantized Electron Accumulation Layers
- (2010) P. D. C. King et al. PHYSICAL REVIEW LETTERS
- Temperature dependence of current-voltage characteristics in highly doped Ag/p-GaN/In Schottky diodes
- (2009) K. Çınar et al. JOURNAL OF APPLIED PHYSICS
- Electronic transport and Schottky barrier heights of Pt/n-type GaN Schottky diodes in the extrinsic region
- (2009) Yow-Jon Lin JOURNAL OF APPLIED PHYSICS
- When group-III nitrides go infrared: New properties and perspectives
- (2009) Junqiao Wu JOURNAL OF APPLIED PHYSICS
- High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap
- (2008) Carl J. Neufeld et al. APPLIED PHYSICS LETTERS
- Determination of the branch-point energy of InN: Chemical trends in common-cation and common-anion semiconductors
- (2008) P. D. C. King et al. PHYSICAL REVIEW B
- InN/GaN valence band offset: High-resolution x-ray photoemission spectroscopy measurements
- (2008) P. D. C. King et al. PHYSICAL REVIEW B
- Photoelectron spectroscopic investigation of InN and InN/GaN heterostructures
- (2008) C.F. Shih et al. THIN SOLID FILMS
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