Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes

Photogated transistor of III-nitride nanorods

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Temperature dependence of current-voltage characteristics in highly doped Ag/p-GaN/In Schottky diodes

(2009) K. Çınar et al.   JOURNAL OF APPLIED PHYSICS

Electronic transport and Schottky barrier heights of Pt/n-type GaN Schottky diodes in the extrinsic region

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High-barrier rectifying contacts on undoped ZnO films with (NH4)2Sxtreatment owing to Fermi-level pinning

(2009) Yow-Jon Lin et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Electrical characteristics of contacts to thin film N-polar n-type GaN

(2008) Hyunsoo Kim et al.   APPLIED PHYSICS LETTERS

High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap

(2008) Carl J. Neufeld et al.   APPLIED PHYSICS LETTERS

Photoelectron spectroscopic investigation of InN and InN/GaN heterostructures

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