Composition and bandgap control of AlxGa1−xN films synthesized by plasma-assisted pulsed laser deposition

AlGaN/GaN field effect transistors functionalized with recognition peptides

(2014) N. Rohrbaugh et al.   APPLIED PHYSICS LETTERS

Synthesis of homogeneous and high-quality GaN films on Cu(111) substrates by pulsed laser deposition

(2014) Wenliang Wang et al.   CRYSTENGCOMM

Epitaxial growth of high quality AlN films on metallic aluminum substrates

(2014) Wenliang Wang et al.   CRYSTENGCOMM

Synthesis of high Al content Al Ga1−N ternary films by pulsed laser co-ablation of GaAs and Al targets assisted by nitrogen plasma

(2014) Hua Cai et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Effects of InGaN layer thickness of AlGaN/InGaN superlattice electron blocking layer on the overall efficiency and efficiency droops of GaN-based light emitting diodes

(2014) Chun-Ta Yu et al.   OPTICS EXPRESS

High excitation of the species in nitrogen–aluminum plasma generated by electron cyclotron resonance microwave discharge of N 2 gas and pulsed laser ablation of Al target

(2014) Peipei Liang et al.   SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY

Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1−xN thin films at low temperatures

(2014) Cagla Ozgit-Akgun et al.   Journal of Materials Chemistry C

Plasma nanoscience: from nano-solids in plasmas to nano-plasmas in solids

(2013) K. Ostrikov et al.   ADVANCES IN PHYSICS

Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200 mm Silicon (111) Substrate

(2013) Dennis Christy et al.   Applied Physics Express

Composition dependent bilayer atomic ordering in AlxGa1−xN films examined by polarization-dependent extended x-ray absorption fine structure

(2012) J. C. Woicik et al.   APPLIED PHYSICS LETTERS

Growth and Characterization of Ternary AlGaN Alloy Nanocones across the Entire Composition Range

(2011) Chengyu He et al.   ACS Nano

High gain ultraviolet photodetectors based on AlGaN/GaN heterostructures for optical switching

(2011) M. Martens et al.   APPLIED PHYSICS LETTERS

Influence of transferred-electron effect on drain-current characteristics of AlGaN/GaN heterostructure field-effect transistors

(2011) Maziar Moradi et al.   JOURNAL OF APPLIED PHYSICS

Bandgap engineering in MBE grown Al1−xGaxN epitaxial columnar nanostructures

(2011) J Wu et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Demonstration of AlGaN/GaN high-electron-mobility transistors on 100 mm diameter Si(111) by plasma-assisted molecular beam epitaxy

(2010) K. Radhakrishnan et al.   APPLIED PHYSICS LETTERS

Electrical-stress-induced degradation in AlGaN/GaN high electron mobility transistors grown under gallium-rich, nitrogen-rich, and ammonia-rich conditions

(2010) T. Roy et al.   APPLIED PHYSICS LETTERS

High Al-content AlxGa1−xN epilayers grown on Si substrate by plasma-assisted molecular beam epitaxy

(2009) A.SH. Hussein et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Internal strains and crystal structure of the layers in AlGaN/GaN heterostructures grown on a sapphire substrate

(2009) V. P. Kladko et al.   JOURNAL OF APPLIED PHYSICS

Ultraviolet light-emitting diodes based on group three nitrides

(2008) Asif Khan et al.   Nature Photonics