Demonstration of AlGaN/GaN high-electron-mobility transistors on 100 mm diameter Si(111) by plasma-assisted molecular beam epitaxy

Published 2010 View Full Article

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Title
Demonstration of AlGaN/GaN high-electron-mobility transistors on 100 mm diameter Si(111) by plasma-assisted molecular beam epitaxy
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 23, Pages 232107
Publisher
AIP Publishing
Online
2010-12-11
DOI
10.1063/1.3518717
References
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