Ultrahigh performance negative thermal-resistance switching based on individual ZnO:K, Cl micro/nanowires for multibit nonvolatile resistance random access memory dual-written/erased repeatedly by temperature or bias

Space charge polarization-induced symmetrical negative resistive switching in individual p-type GeSe2:Bi superstructure nanobelts for non-volatile memory

(2015) Minghui Cao et al.   Journal of Materials Chemistry C

Effects of Interface States on Photoexcited Carriers in ZnO/Zn2SnO4 Type-II Radial Heterostructure Nanowires

(2014) Baochang Cheng et al.   ACS Applied Materials & Interfaces

Modulation of Surface Trap Induced Resistive Switching by Electrode Annealing in Individual PbS Micro/Nanowire-Based Devices for Resistance Random Access Memory

(2014) Jianping Zheng et al.   ACS Applied Materials & Interfaces

Magnetoelectric Assisted 180° Magnetization Switching for Electric Field Addressable Writing in Magnetoresistive Random-Access Memory

(2014) Zhiguang Wang et al.   ACS Nano

Multibit Programmable Optoelectronic Nanowire Memory with Sub-femtojoule Optical Writing Energy

(2014) Ming-Pei Lu et al.   ADVANCED FUNCTIONAL MATERIALS

Poole-Frenkel effect on electrical characterization of Al-doped ZnO films deposited on p-type GaN

(2014) Bohr-Ran Huang et al.   JOURNAL OF APPLIED PHYSICS

Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing

(2014) Yao-Feng Chang et al.   JOURNAL OF APPLIED PHYSICS

Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices

(2014) Umberto Celano et al.   NANO LETTERS

Resistive Random Access Memory Enabled by Carbon Nanotube Crossbar Electrodes

(2013) Cheng-Lin Tsai et al.   ACS Nano

Integrating Multiple Resistive Memory Devices on a Single Carbon Nanotube

(2013) David Brunel et al.   ADVANCED FUNCTIONAL MATERIALS

High Performance Multi-Level Non-Volatile Polymer Memory with Solution-Blended Ferroelectric Polymer/High-kInsulators for Low Voltage Operation

(2013) Sun Kak Hwang et al.   ADVANCED FUNCTIONAL MATERIALS

Universal Electric-Field-Driven Resistive Transition in Narrow-Gap Mott Insulators

(2013) Pablo Stoliar et al.   ADVANCED MATERIALS

Integrated One Diode–One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography

(2013) Li Ji et al.   NANO LETTERS

Oxide Heterostructure Resistive Memory

(2013) Yuchao Yang et al.   NANO LETTERS

Individual ZnO nanowires for photodetectors with wide response range from solar-blind ultraviolet to near-infrared modulated by bias voltage and illumination intensity

(2013) Baochang Cheng et al.   OPTICS EXPRESS

Individual Zn2SnO4-sheathed ZnO heterostructure nanowires for efficient resistive switching memory controlled by interface states

(2013) Baochang Cheng et al.   Scientific Reports

Individual Ohmic contacted ZnO/Zn2SnO4 radial heterostructured nanowires as photodetectors with a broad-spectral-response: injection of electrons into/from interface states

(2013) Baochang Cheng et al.   Journal of Materials Chemistry C

Understanding the resistive switching characteristics and mechanism in active SiOx-based resistive switching memory

(2012) Yao-Feng Chang et al.   JOURNAL OF APPLIED PHYSICS

Investigation statistics of bipolar multilevel memristive mechanism and characterizations in a thin FeOx transition layer of TiN/SiO2/FeOx/Fe structure

(2011) Yao-Feng Chang et al.   JOURNAL OF APPLIED PHYSICS

FETRAM. An Organic Ferroelectric Material Based Novel Random Access Memory Cell

(2011) Saptarshi Das et al.   NANO LETTERS

Intrinsic Mechanisms of Memristive Switching

(2011) Kazuki Nagashima et al.   NANO LETTERS

Piezotronic Nanowire-Based Resistive Switches As Programmable Electromechanical Memories

(2011) Wenzhuo Wu et al.   NANO LETTERS

Memory and Threshold Resistance Switching in Ni/NiO Core–Shell Nanowires

(2011) Li He et al.   NANO LETTERS

Electric-Field-Induced Resistive Switching in a Family of Mott Insulators: Towards a New Class of RRAM Memories

(2010) Laurent Cario et al.   ADVANCED MATERIALS

Role of germanium in the reduced temperature dependence of Ti-based nanocrystals formation for nonvolatile memory applications

(2010) Li-Wei Feng et al.   APPLIED PHYSICS LETTERS

Resistive-Switching Memory Effects of NiO Nanowire/Metal Junctions

(2010) Keisuke Oka et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Carrier transport mechanism in La-incorporated high-k dielectric/metal gate stack MOSFETs

(2010) Hyuk-Min Kwon et al.   MICROELECTRONIC ENGINEERING

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Nonvolatile Bipolar Resistive Memory Switching in Single Crystalline NiO Heterostructured Nanowires

(2009) Keisuke Oka et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Contact barriers in a single ZnO nanowire device

(2008) Kanghyun Kim et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

Electron field emission from ZnO self-organized nanostructures and doped ZnO:Ga nanostructured films

(2008) V.A. Karpyna et al.   MICROELECTRONICS JOURNAL

The effects of electron–hole separation on the photoconductivity of individual metal oxide nanowires

(2008) J D Prades et al.   NANOTECHNOLOGY