Investigation statistics of bipolar multilevel memristive mechanism and characterizations in a thin FeOx transition layer of TiN/SiO2/FeOx/Fe structure

Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory

(2011) Shimeng Yu et al.   APPLIED PHYSICS LETTERS

Improvement of resistance switching characteristics in a thin FeOx transition layer of TiN/SiO2/FeOx/FePt structure by rapid annealing

(2010) Li-Wei Feng et al.   APPLIED PHYSICS LETTERS

A study of resistive switching effects on a thin FeOx transition layer produced at the oxide/iron interface of TiN/SiO2/Fe-contented electrode structures

(2010) Li-Wei Feng et al.   APPLIED PHYSICS LETTERS

High switching endurance in TaOx memristive devices

(2010) J. Joshua Yang et al.   APPLIED PHYSICS LETTERS

On the Gradual Unipolar and Bipolar Resistive Switching of TiN\HfO[sub 2]\Pt Memory Systems

(2010) L. Goux et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Multilevel resistive switching in Ti/CuxO/Pt memory devices

(2010) Sheng-Yu Wang et al.   JOURNAL OF APPLIED PHYSICS

Reversible Resistive Switching and Multilevel Recording in La0.7Sr0.3MnO3Thin Films for Low Cost Nonvolatile Memories

(2010) César Moreno et al.   NANO LETTERS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Investigation of resistive switching in Cu-doped HfO2thin film for multilevel non-volatile memory applications

(2009) Yan Wang et al.   NANOTECHNOLOGY

Low current resistive switching in Cu–SiO2 cells

(2008) C. Schindler et al.   APPLIED PHYSICS LETTERS

Nonpolar Nonvolatile Resistive Switching in Cu Doped $\hbox{ZrO}_{2}$

(2008) Weihua Guan et al.   IEEE ELECTRON DEVICE LETTERS