Individual Zn2SnO4-sheathed ZnO heterostructure nanowires for efficient resistive switching memory controlled by interface states

Title
Individual Zn2SnO4-sheathed ZnO heterostructure nanowires for efficient resistive switching memory controlled by interface states
Authors
Keywords
-
Journal
Scientific Reports
Volume 3, Issue 1, Pages -
Publisher
Springer Nature
Online
2013-11-19
DOI
10.1038/srep03249

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