Ultrahigh performance negative thermal-resistance switching based on individual ZnO:K, Cl micro/nanowires for multibit nonvolatile resistance random access memory dual-written/erased repeatedly by temperature or bias
出版年份 2015 全文链接
标题
Ultrahigh performance negative thermal-resistance switching based on individual ZnO:K, Cl micro/nanowires for multibit nonvolatile resistance random access memory dual-written/erased repeatedly by temperature or bias
作者
关键词
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出版物
Journal of Materials Chemistry C
Volume 3, Issue 47, Pages 12220-12229
出版商
Royal Society of Chemistry (RSC)
发表日期
2015-10-29
DOI
10.1039/c5tc02824h
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